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參數(shù)資料
| 型號(hào)： | FMMT489 |
| 廠(chǎng)商： | ZETEX PLC |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | NPN SILICON PLANAR MEDIUM POWER TRANSISTOR |
| 中文描述： | 1000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大小： | 47K |
| 代理商： | FMMT489 |
SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE3 - OCTOBER 1995
%
FEATURES
*
Very low equivalent on-resistance;
R
CE(sat)
175m
at 1A
COMPLEMENTARY TYPE
PARTMARKING DETAIL
FMMT589
489
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
30
V
Emitter-Base Voltage
V
EBO
5
V
Continuous Collector Current
I
C
1
A
Peak Pulse Current
I
CM
4
A
Base Current
I
B
200
mA
Power Dissipation at T
amb
=25°C
P
tot
500
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
I
C
=100
μ
A
I
C
=10mA*
I
E
=100
μ
A
V
CB
=30V
V
CES
=30V
V
EB
=4V
I
C
=1A, I
B
=100mA*
I
C
=2A, I
B
=200mA*
I
C
=1A, I
B
=100mA*
Breakdown Voltages
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
I
CBO
I
CES
I
EBO
V
CE(sat)
50
V
30
V
5
V
Collector Cut-Off Current
100
nA
100
nA
Emitter Cut-Off Current
100
nA
Collector-Emitter
Saturation Voltage
0.3
0.6
V
V
Base-Emitter
Saturation Voltage
V
BE(sat)
1.1
V
Base-Emitter
Turn On Voltage
V
BE(on)
1.0
V
I
C
=1A, V
CE
=2V*
Static Forward Current
Transfer Ratio
h
FE
100
100
60
20
300
I
C
=1mA, V
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=4A, V
CE
=2V*
I
=50mA, V
CE
=10V
f=100MHz
Transition Frequency
f
T
150
MHz
Collector-Base
Breakdown Voltage
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
For typical characteristics graphs see FMMT449 datasheet
C
obo
10
pF
V
CB
=10V, f=1MHz
FMMT489
C
B
E
3 - 114
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