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參數資料
| 型號： | FP1L3N |
| 廠商： | NEC Corp. |
| 英文描述： | on-chip resistor PNP silicon epitaxial transistor For mid-speed switching |
| 中文描述： | 芯片電阻進步黨硅外延晶體管中速開關 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 146K |
| 代理商： | FP1L3N |
2002
Document No. D16181EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
COMPOUND TRANSISTOR
FP1 SERIES
on-chip resistor PNP silicon epitaxial transistor
For mid-speed switching
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
Up to 0.7 A current drive available
On-chip bias resistor
Low power consumption during drive
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC Semiconductor
Devices” (Document No. C11531E) published by NEC Corporation
to know the specification of quality grade on the devices and its
recommended applications.
FP1 SERIES LISTS
Products
Marking
R
1
(K
)
R
2
(K
)
FP1A4A
S30
10
FP1L2Q
S31
0.47
4.7
FP1A3M
S32
1.0
1.0
FP1F3P
S33
2.2
10
FP1J3P
S36
3.3
10
FP1L3N
S34
4.7
10
FP1A4M
S35
10
10
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
25
25
10
0.7
1.0
20
V
Collector to emitter voltage
V
CEO
V
Emitter to base voltage
V
EBO
V
Collector current (DC)
I
C(DC)
A
Collector current (Pulse)
I
C(pulse)
*
A
Base current (DC)
I
B(DC)
mA
Total power dissipation
P
T
200
mW
°
C
°
C
Junction temperature
T
j
150
Storage temperature
* PW
≤
10 ms, duty cycle
≤
50 %
T
stg
55 to +150
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|---|---|
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