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參數資料
| 型號： | FP215 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 元件分類： | 運動控制電子 |
| 英文描述： | High-Frequency Amp, Differential Amp Applications |
| 中文描述： | 高頻放大器，差分放大器應用 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 87K |
| 代理商： | FP215 |
52098HA (KT)/41594HO (KOTO) BX-0352 No.4698-1/3
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
PNP Epitaxial Planar Silicon Composite Transistors
High-Frequency Amp,
Differential Amp Applications
Ordering number:EN4698
FP215
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Specifications
Absolute Maximum Ratings
at Ta = 25C
Package Dimensions
unit:mm
2108A
[FP215]
Features
· Composite type with 2 transistors contained in the
PCP package currently in use, improving the mount-
ing efficiency greatly.
· The FP215 is formed with two chips, being equiva-
lent to the 2SA1724, placed in one package.
· Excellent in thermal equilibrium and pair capability.
Electrical Connection
Note:The specifications shown above are for individual transistor.
However, the DC Current Gain Ratio and Base-to-Emitter Voltage Difference are for the paired transistors.
Marking:215
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Mounted on ceramic board (250mm
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0.8mm) 1 unit
Mounted on ceramic board (250mm
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Electrical Characteristics
at Ta=25C
1:Base (PNP TR)
2:Collector (PNP TR)
3:Emitter Common
4:Collector (PNP TR)
5:Base (PNP TR)
6:Collector (PNP TR)
7:Collector (PNP TR)
SANYO:PCP5
(Bottom view)
1:Base (PNP TR)
2:Collector (PNP TR)
3:Emitter Common
4:Collector (PNP TR)
5:Base (PNP TR)
6:Collector (PNP TR)
7:Collector (PNP TR)
(Top view)
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