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參數(shù)資料
| 型號： | FPN330 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN Low Saturation Transistor |
| 中文描述： | 3000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 47K |
| 代理商： | FPN330 |
NPN Low Saturation Transistor
FPN330
FPN330A
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES
:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
These devices are designed for high current gain and low
saturation voltage with collector currents up to 3.0 A continuous.
Sourced from Process NB.
Symbol
Characteristic
Max
Units
FPN330 / FPN330A
1.0
50
125
P
D
R
θ
JC
R
θ
JA
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
W
°
C/W
°
C/W
Symbol
Parameter
Value
Units
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Operating and Storage Junction Temperature Range
30
50
5.0
3.0
V
V
V
A
°
C
- Continuous
-55 to +150
F
TO-226
CBE
1999 Fairchild Semiconductor Corporation
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| FPN330_Q | 功能描述:兩極晶體管 - BJT NPN Transistor Low Saturation RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FPN330A | 功能描述:兩極晶體管 - BJT NPN Transistor Low Saturation RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FPN330A_Q | 功能描述:兩極晶體管 - BJT NPN Transistor Low Saturation RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FPN3-4916 | 制造商:RIEDON 制造商全稱:Riedon Powertron 功能描述:FPN FHN Networks Precision Shunt Networks |
| FPN4249 | 制造商:Freescale Semiconductor 功能描述: |
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