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參數資料
| 型號： | FQA10N80C_NL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 800V N-Channel MOSFET |
| 中文描述： | 10 A, 800 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, TO-3P, 3 PIN |
| 文件頁數： | 1/9頁 |
| 文件大小： | 804K |
| 代理商： | FQA10N80C_NL |
2006 Fairchild Semiconductor Corporation
FQA10N80C Rev. A1
1
www.fairchildsemi.com
F
September 2006
QFET
FQA10N80C
800V N-Channel MOSFET
Features
10A, 800V, R
DS(on)
= 1.1
@V
GS
= 10 V
Low gate charge ( typical 44 nC)
Low Crss ( typical 15pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
Absolute Maximum Ratings
Thermal Characteristics
D
G
S
G
S
D
TO-3P
FQA Series
Symbol
Parameter
FQA10N80C
Units
V
DSS
I
D
Drain-Source Voltage
800
V
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
10
A
6.32
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
40
A
Gate-Source Voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
920
mJ
Avalanche Current
(Note 1)
10
A
Repetitive Avalanche Energy
(Note 1)
24
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.0
V/ns
P
D
Power Dissipation (T
C
= 25°C)
240
W
- Derate above 25°C
1.92
W/°C
T
J
, T
STG
Operating and Storage Temperature Range
-55 to +150
°C
T
L
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
300
°C
Symbol
Parameter
Typ
Max
Units
R
θ
JC
R
θ
CS
R
θ
JA
Thermal Resistance, Junction-to-Case
--
0.52
°C
/
W
Thermal Resistance, Case-to-Sink
0.24
--
°C
/
W
Thermal Resistance, Junction-to-Ambient
--
40
°C
/
W
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