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參數(shù)資料
| 型號： | FQA18N50V |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | 500V N-Channel MOSFET |
| 中文描述： | 500V N溝道MOSFET |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 624K |
| 代理商： | FQA18N50V |
2002 Fairchild Semiconductor Corporation
F
Rev. B, August 2002
25
50
75
100
125
150
0
5
10
15
20
I
D
,
T
C
, Case Temperature [
℃
]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
※
N o te s :
1 . Z
θ
2 . D u ty F a c to r, D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
θ
J C
(t) = 0 .4 5
℃
/W M a x .
J C
(t)
single pu ls e
D = 0 .5
0.02
0.01
0.2
0.05
0.1
Z
θ
J
(
t
1
, S q u a re W a v e P u lse D u ra tio n [se c ]
Typical Characteristics
(Continued)
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
10
2
DC
10 ms
1 ms
100 us
Operation in This Area
is Limited by R
DS(on)
※
Notes :
1. T
C
= 25
o
C
2. T
J
= 150
3. Single Pulse
o
C
I
D
,
V
DS
, Drain-Source Voltage [V]
Figure 11. Transient Thermal Response Curve
t
1
P
DM
t
2
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
※
Notes :
1. V
GS
= 10 V
2. I
D
= 10 A
R
D
,
D
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
※
Notes :
1. V
GS
= 0 V
2. I
D
= 250
μ
A
B
D
,
D
T
J
, Junction Temperature [
o
C]
Figure 9
.
Maximum Safe Operating Area
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
Figure 10. Maximum Drain Current
vs. Case Temperature
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| FQA18N50V2 | 功能描述:MOSFET 500V N-Ch QFET V2 Series RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQA19N20 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQA19N20C | 功能描述:MOSFET 200V N-Channel Advance Q-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQA19N20L | 功能描述:MOSFET 200V N-Ch QFET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQA19N60 | 功能描述:MOSFET 600V N-CH QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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