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參數資料
| 型號： | FQB11P06 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 60V P-Channel MOSFET |
| 中文描述： | 11.4 A, 60 V, 0.175 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | D2PAK-3 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 566K |
| 代理商： | FQB11P06 |
2001 Fairchild Semiconductor Corporation
November 2001
Rev. B, November 2001
F
FQB11N40 / FQI11N40
400V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply,
electronic lamp ballast based on half bridge.
Features
11.4A, 400V, R
DS(on)
= 0.48
@V
GS
= 10 V
Low gate charge ( typical 27 nC)
Low Crss ( typical 20 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
! "
!
!
S
!
"
"
D
G
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQB11N40 / FQI11N40
400
11.4
7.2
46
±
30
520
11.4
14.7
4.5
3.13
147
1.18
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V
W
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
Parameter
Typ
--
--
--
Max
0.85
40
62.5
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
D
2
-PAK
FQB Series
I
2
-PAK
FQI Series
G
S
D
G
S
D
相關PDF資料 |
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| FQI12N20L | 200V LOGIC N-Channel MOSFET |
| FQB12N20L | 200V LOGIC N-Channel MOSFET |
| FQI12N20 | 200V N-Channel MOSFET(漏源電壓為200V的N溝道增強型MOSFET) |
| FQB12N20 | 200V N-Channel MOSFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FQB11P06_04 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:60V P-Channel MOSFET |
| FQB11P06TM | 功能描述:MOSFET 60V P-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQB12N20 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V N-Channel MOSFET |
| FQB12N20L | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V LOGIC N-Channel MOSFET |
| FQB12N20LTM | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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