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參數資料
| 型號： | FQB32N20C |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 200V N-Channel MOSFET |
| 中文描述： | 28 A, 200 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, D2PAK-3 |
| 文件頁數： | 4/9頁 |
| 文件大小： | 911K |
| 代理商： | FQB32N20C |
Rev. A, March 2004
F
2004 Fairchild Semiconductor Corporation
1 0
-5
10
-4
1 0
-3
1 0
-2
1 0
-1
10
0
10
1
10
-2
10
-1
10
0
N otes :
1 . Z
θ
JC
(t) = 0.80
2 . D u ty F a ctor, D = t
1
/t
2
3 . T
JM
- T
C
= P
D M
* Z
θ
JC
(t)
※
/W M a x.
℃
single pulse
D = 0.5
0.02
0.01
0.2
0.05
0.1
Z
θ
J
(
t
1
, S q u a re W a ve P u lse D u ra tion [se c]
25
50
75
100
125
150
0
5
10
15
20
25
30
I
D
,
T
C
, Case Temperature [ ]
℃
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
10 ms
100
μ
s
DC
1 ms
Operation in This Area
is Limited by R
DS(on)
Notes :
※
1. T
C
= 25
2. T
J
= 150
3. Single Pulse
o
C
o
C
I
D
,
V
DS
, Drain-Source Voltage [V]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :
※
1. V
GS
= 10 V
2. I
D
= 14 A
R
D
,
D
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes :
※
1. V
= 0 V
2. I
D
= 250 μA
B
D
,
D
T
J
, Junction Temperature [
o
C]
Typical Characteristics
(Continued)
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 11. Transient Thermal Response Curve
t
1
P
DM
t
2
Figure 8. On-Resistance Variation
vs Temperature
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FQB32N20CTM | 功能描述:MOSFET NCH/200V 32A/QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQB33N10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:100V N-Channel MOSFET |
| FQB33N10_04 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:100V N-Channel MOSFET |
| FQB33N10_13 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel QFET MOSFET |
| FQB33N10L | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:100V LOGIC N-Channel MOSFET |
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