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參數資料
| 型號： | FQB4N60 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 600V N-Channel MOSFET(漏源電壓為600V的N溝道增強型MOSFET) |
| 中文描述： | 4.4 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 |
| 封裝： | D2PAK-3 |
| 文件頁數： | 9/9頁 |
| 文件大小： | 539K |
| 代理商： | FQB4N60 |
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相關PDF資料 |
PDF描述 |
|---|---|
| FQI4N60 | 600V N-Channel MOSFET |
| FQB4N80 | 800V N-Channel MOSFET |
| FQI4N80 | 800V N-Channel MOSFET |
| FQB4N90 | 900V N-Channel MOSFET |
| FQI4N90 | 900V N-Channel MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FQB4N60TM | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQB4N80 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:800V N-Channel MOSFET |
| FQB4N80TM | 功能描述:MOSFET 800V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQB4N90 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:900V N-Channel MOSFET |
| FQB4N90TM | 功能描述:MOSFET 900V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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