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參數資料
型號: FQB9P25
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 250V P-Channel MOSFET
中文描述: 9.4 A, 250 V, 0.62 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝: ROHS COMPLIANT, D2PAK-3
文件頁數: 3/9頁
文件大小: 573K
代理商: FQB9P25
2000 Fairchild Semiconductor International
F
Rev. A2, December 2000
0
5
10
Q
G
, Total Gate Charge [nC]
15
20
25
30
35
0
2
4
6
8
10
12
V
DS
= -125V
V
DS
= -50V
V
DS
= -200V
Note : I
D
= -9.4 A
-
G
,
10
-1
10
0
10
1
0
400
800
1200
1600
2000
2400
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
-V
DS
, Drain-Source Voltage [V]
0.0
0.5
1.0
1.5
2.0
2.5
3.0
10
-1
10
0
10
1
150
Notes :
1. V
GS
= 0V
2. 250
μ
s Pulse Test
25
-
D
-V
SD
, Source-Drain Voltage [V]
0
10
20
30
40
0.0
0.5
1.0
1.5
2.0
Note : T
J
= 25
V
GS
= - 20V
V
GS
= - 10V
R
D
]
D
-I
D
, Drain Current [A]
2
4
6
8
10
10
-1
10
0
10
1
150
25
-55
Notes :
1. V
DS
= -50V
2. 250
μ
s Pulse Test
-
D
-V
GS
, Gate-Source Voltage [V]
10
-1
10
0
10
1
10
-1
10
0
10
1
V
GS
Top : -15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
Bottom : -5.5 V
Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25
-
D
,
-V
DS
, Drain-Source Voltage [V]
Typical Characteristics
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
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相關代理商/技術參數
參數描述
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