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參數(shù)資料
| 型號(hào)： | FQD19N10 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 100V N-Channel MOSFET(漏源電壓為100V、漏電流為5.6A的N溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 15.6 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | ROHS COMPLIANT, DPAK-3 |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大小： | 589K |
| 代理商： | FQD19N10 |
2000 Fairchild Semiconductor International
August 2000
Rev. A, August 2000
F
QFET
TM
FQD19N10 / FQU19N10
100V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Features
15.6A, 100V, R
DS(on)
= 0.1
@V
GS
= 10 V
Low gate charge ( typical 19 nC)
Low Crss ( typical 32 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQD19N10 / FQU19N10
100
15.6
9.8
62.4
±
25
220
15.6
5.0
6.0
2.5
50
0.4
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
Parameter
Typ
--
--
--
Max
2.5
50
110
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
! "
!
!
S
!
"
"
D
G
I-PAK
FQU Series
D-PAK
FQD Series
G
S
D
G
S
D
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| FQU19N10 | 100V N-Channel MOSFET(漏源電壓為100V、漏電流為5.6A的N溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FQD19N10_09 | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:100V N-Channel MOSFET |
| FQD19N10_13 | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:N-Channel QFET MOSFET |
| FQD19N10L | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:100V LOGIC N-Channel MOSFET |
| FQD19N10L_13 | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:N-Channel QFET MOSFET |
| FQD19N10LTF | 功能描述:MOSFET 100V N-Ch QFET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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