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參數資料
| 型號： | FQD1N60 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 600V N-Channel MOSFET |
| 中文描述： | 1 A, 600 V, 11.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 543K |
| 代理商： | FQD1N60 |
2000 Fairchild Semiconductor International
April 2000
Rev. A, April 2000
F
QFET
TM
FQD1N60 / FQU1N60
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
Features
1.0A, 600V, R
DS(on)
= 11.5
@V
GS
= 10 V
Low gate charge ( typical 5.0 nC)
Low Crss ( typical 3.0 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQD1N60 / FQU1N60
600
1.0
0.63
4.0
±
30
50
1.0
3.0
4.5
2.5
30
0.24
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
Parameter
Typ
--
--
--
Max
4.17
50
110
Units
°C W
°C W
°C W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
! "
!
!
S
!
"
"
D
G
I-PAK
FQU Series
D-PAK
FQD Series
G
S
D
G
S
D
相關PDF資料 |
PDF描述 |
|---|---|
| FQU1N60 | 600V N-Channel MOSFET |
| FQD1N80 | 800V N-Channel MOSFET |
| FQU1N80 | 800V N-Channel MOSFET |
| FQD1P50 | 500V P-Channel MOSFET |
| FQU1P50 | 500V P-Channel MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FQD1N60 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D-PAK |
| FQD1N60C | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V N-Channel MOSFET |
| FQD1N60C_09 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V N-Channel MOSFET |
| FQD1N60CTF | 功能描述:MOSFET 600V N-Channel Adv Q-FET C-Series RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQD1N60CTM | 功能描述:MOSFET N-CH/600V/1A/ QFET C-Series RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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