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參數資料
| 型號： | FQD3P50 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 500V P-Channel MOSFET(漏源電壓為-500V、漏電流為2.1A的P溝道增強型MOS場效應管) |
| 中文描述： | 2.1 A, 500 V, 4.9 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | ROHS COMPLIANT, DPAK-3 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 638K |
| 代理商： | FQD3P50 |
2000 Fairchild Semiconductor International
August 2000
Rev. A, August 2000
F
QFET
TM
FQD3P50 / FQU3P50
500V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for electronic lamp ballast based on complimentary
half bridge.
Features
-2.1A, -500V, R
DS(on)
= 4.9
@V
GS
= -10 V
Low gate charge ( typical 18 nC)
Low Crss ( typical 9.5 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQD3P50 / FQU3P50
-500
-2.1
-1.33
-8.4
±
30
250
-2.1
5.0
-4.5
2.5
50
0.4
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
Parameter
Typ
--
--
--
Max
2.5
50
110
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
I-PAK
FQU Series
D-PAK
FQD Series
G
S
D
G
S
D
●
●
▲
!
!
D
!
!
●
S
G
相關PDF資料 |
PDF描述 |
|---|---|
| FQU3P50 | 500V P-Channel MOSFET(漏源電壓為-500V、漏電流為2.1A的P溝道增強型MOS場效應管) |
| FQD45N03L | N-Channel Logic Level PWM Optimized Power MOSFET |
| FQD4N20L | 200V Logic N-Channel MOSFET(漏源電壓為200V、漏電流為3.2A的邏輯N溝道增強型MOS場效應管) |
| FQD4N25 | 250V N-Channel MOSFET(漏源電壓為250V、漏電流為3.0A的N溝道增強型MOS場效應管) |
| FQU4N25 | 250V N-Channel MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FQD3P50_09 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:500V P-Channel MOSFET |
| FQD3P50TF | 功能描述:MOSFET 500V P-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQD3P50TM | 功能描述:MOSFET 500V P-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQD3P50TM_F085 | 功能描述:MOSFET Trans MOS P-Ch 500V 2.1A 3-Pin 2+Tab RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQD45N03L | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level PWM Optimized Power MOSFET |
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