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參數(shù)資料
| 型號： | FQD60N03L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level MOSFETs 30V, 30A, 0.023ohm |
| 中文描述： | 30 A, 30 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | TO-252AA, 3 PIN |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 124K |
| 代理商： | FQD60N03L |
2004 Fairchild Semiconductor Corporation
FQD60N03L Rev. B1
F
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
(V
GS
= 4.5V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Unclamped Inductive Switching
Drain-Source Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
B
VDSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 25V
V
GS
= 0V
V
GS
=
±
20V
30
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
C
= 125
o
C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
V
GS(TH)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 30A, V
GS
= 10V
I
D
= 19A, V
GS
= 4.5V
1
-
-
-
3
V
r
DS(ON)
Drain to Source On Resistance
0.014
0.024
0.023
0.030
C
ISS
C
OSS
C
RSS
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
-
900
210
90
18
9.6
1.0
3.4
3.4
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 15V
I
D
= 19A
I
g
= 1.0mA
28
14
1.5
-
-
V
DD
= 15V, I
D
= 7.9A
V
GS
= 4.5V, R
GS
= 18
-
-
-
-
-
-
-
90
-
-
-
-
83
ns
ns
ns
ns
ns
ns
11
49
27
28
-
V
DD
= 15V, I
D
= 7.9A
V
GS
= 10V, R
GS
= 18
-
-
-
-
-
-
-
48
-
-
-
-
120
ns
ns
ns
ns
ns
ns
6
26
52
28
-
t
AV
Avalanche Time
I
D
= 2.7 A, 3.0 mH
180
-
-
μ
s
V
SD
Source to Drain Diode Voltage
I
SD
= 19A
I
SD
= 10A
I
SD
= 19A, dI
SD
/dt = 100A/
μ
s
I
SD
= 19A, dI
SD
/dt = 100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
58
70
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
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