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參數資料
| 型號： | FQD6N40C |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 400V N-Channel MOSFET |
| 中文描述： | 4.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DPAK-3 |
| 文件頁數： | 3/9頁 |
| 文件大小： | 623K |
| 代理商： | FQD6N40C |
Rev. A, October 2003
2003 Fairchild Semiconductor Corporation
F
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
-1
10
0
10
1
150
℃
※
Notes :
1. V
GS
= 0V
2. 250
μ
s Pulse Test
25
℃
I
D
,
V
SD
, Source-Drain voltage [V]
0
5
10
15
20
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
GS
= 20V
V
GS
= 10V
※
Note : T
J
= 25
℃
R
D
Ω
D
I
D
, Drain Current [A]
Typical Characteristics
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
10
-1
10
0
10
1
10
-1
10
0
10
1
GS
V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
※
Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25
℃
I
D
,
V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
10
-1
10
0
10
1
150
o
C
25
o
C
-55
o
C
※
Notes :
1. V
DS
= 40V
2. 250
μ
s Pulse Test
I
D
,
V
GS
, Gate-Source Voltage [V]
10
-1
10
0
10
1
0
200
400
600
800
1000
1200
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
※
Notes ;
GS
= 0 V
1. V
C
rss
C
oss
C
iss
C
V
DS
, Drain-Source Voltage [V]
0
5
10
15
20
0
2
4
6
8
10
12
V
DS
= 200V
V
DS
= 80V
V
DS
= 320V
※
Note : I
D
= 6A
V
G
,
Q
G
, Total Gate Charge [nC]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
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PDF描述 |
|---|---|
| FQU6N40C | 400V N-Channel MOSFET |
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| FQU6N40 | 400V N-Channel MOSFET |
| FQD6N50C | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary planar stripe, DMOS technology |
| FQU6N50C | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary planar stripe, DMOS technology |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FQD6N40C_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:400V N-Channel MOSFET |
| FQD6N40CTF | 功能描述:MOSFET 400V N-Channel Adv Q-FET C-Series RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQD6N40CTM | 功能描述:MOSFET 400V N-Channel Advance QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQD6N40CTM_NBEA002 | 功能描述:MOSFET 400V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQD6N40TF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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