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參數資料
| 型號： | FQD6N60CTF |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 600V N-Channel MOSFET |
| 中文描述： | 4 A, 600 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DPAK-3 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 678K |
| 代理商： | FQD6N60CTF |
2005 Fairchild Semiconductor Corporation
FQD6N60C Rev. A
1
www.fairchildsemi.com
F
QFET
FQD6N60C
600V N-Channel MOSFET
Features
4 A, 600 V, R
DS(on)
= 2.0
@ V
GS
= 10 V
Low gate charge ( typical 16 nC )
Low Crss ( typical 7 pF)
Fast switching
100 % avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge
topology.
Absolute Maximum Ratings
Thermal Characteristics
●
●
●
●
●
●
▲
!
!
S
!
!
!
!
D
G
D-PAK
FQD Series
G
S
D
Symbol
Parameter
FQD6N60C
Units
V
DSS
I
D
Drain-Source Voltage
600
V
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
4
A
2.4
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
16
A
Gate-Source Voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
300
mJ
Avalanche Current
(Note 1)
4.0
A
Repetitive Avalanche Energy
(Note 1)
8.0
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation (T
C
= 25°C)
80
W
- Derate above 25°C
0.78
W/°C
T
J
, T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°C
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
300
°C
Symbol
Parameter
Typ
Max
Units
R
θ
JC
R
θ
JA
R
θ
JA
* When mounted on the minimum pad size recommended (PCB Mount)
Thermal Resistance, Junction-to-Case
--
1.56
°C
/
W
Thermal Resistance, Junction-to-Ambient *
--
50
°C
/
W
Thermal Resistance, Junction-to-Ambient
--
110
°C
/
W
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FQD6N60CTM | 功能描述:MOSFET N-CH/600V/6A/ QFET C-Series RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQD6N60CTM_WS | 功能描述:MOSFET 600V N-Ch MOSFET QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQD6P25 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:250V P-Channel MOSFET |
| FQD6P25TF | 功能描述:MOSFET 250V P-Ch QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQD6P25TM | 功能描述:MOSFET P-CH/250V/4.7A/1.1OHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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