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參數資料
| 型號： | FQH90N15 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Power MOSFET |
| 中文描述： | 90 A, 150 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數： | 1/9頁 |
| 文件大小： | 678K |
| 代理商： | FQH90N15 |
2004 Fairchild Semiconductor Corporation
FQH90N15 / FQA90N15 Rev. B
1
www.fairchildsemi.com
F
QF E T
FQH90N15 / FQA90N15
N-Channel Power MOSFET
Features
90A, 150V, R
DS(on)
= 0.018
@V
GS
= 10 V
Low gate charge (typical 220 nC)
Low C
rss
(typical 200 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175
°
C maximum junction temperature rating
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for low volt-
age applications such as audio amplifire, high efficiency switch-
ing for DC/DC converters, and DC motor control, uninterrupted
power supply.
Absolute Maximum Ratings
Thermal Characteristics
! "
!
!
S
!
"
"
"
D
G
G
S
D
TO-247
FQH Series
G
S
D
TO-3P
FQA Series
Symbol
Parameter
FQH90N15/FQA90N15
Unit
V
DSS
I
D
Drain-Source Voltage
150
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
90
63.5
A
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
360
A
Gate-Source voltage
±
25
V
Single Pulsed Avalanche Energy
(Note 2)
1400
mJ
Avalanche Current
(Note 1)
90
A
Repetitive Avalanche Energy
(Note 1)
37.5
mJ
Peak Diode Recovery dv/dt
(Note 3)
6.0
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
375
2.5
W
W/
°
C
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +175
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°
C
Symbol
Parameter
Min.
Max.
Unit
R
θ
JC
R
θ
CS
R
θ
JA
Thermal Resistance, Junction-to-Case
--
0.4
°
C/W
°
C/W
°
C/W
Thermal Resistance, Case-to-Sink
0.24
--
Thermal Resistance, Junction-to-Ambient
--
40
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FQH90N15_06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Power MOSFET |
| FQI10N20 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V N-Channel MOSFET |
| FQI10N20C | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V N-Channel MOSFET |
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| FQI10N20L | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V LOGIC N-Channel MOSFET |
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