- 您現在的位置：買賣IC網 > PDF目錄375884 > FQI17P06 (FAIRCHILD SEMICONDUCTOR CORP) GIGATRUE 550 CAT6 PATCH 30 FT, SNAGLESS, GRAY PDF資料下載
參數資料
| 型號： | FQI17P06 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | GIGATRUE 550 CAT6 PATCH 30 FT, SNAGLESS, GRAY |
| 中文描述： | 17 A, 60 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封裝： | ROHS COMPLIANT, I2PAK-3 |
| 文件頁數： | 2/9頁 |
| 文件大小： | 676K |
| 代理商： | FQI17P06 |
Rev. B, August 2002
F
2002 Fairchild Semiconductor Corporation
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 3.2mH, I
= -16.5A, V
DD
= -25V, R
= 25
,
Starting T
= 25°C
3. I
≤
-16.5A, di/dt
≤
300A/
μ
s, V
≤
BV
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300
μ
s, Duty cycle
≤
2%
5. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
/
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= -250
μ
A
-100
--
--
V
Breakdown Voltage Temperature
I
D
= -250
μ
A, Referenced to 25°C
--
-0.1
--
V/°C
V
DS
= -100 V, V
GS
= 0 V
V
DS
= -80 V, T
C
= 150°C
V
GS
= -30 V, V
DS
= 0 V
V
GS
= 30 V, V
DS
= 0 V
--
--
--
--
--
--
--
--
-1
-10
-100
100
μ
A
μ
A
nA
nA
I
GSSF
I
GSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
V
GS(th)
Gate Threshold Voltage
R
DS(on)
Static Drain-Source
On-Resistance
g
FS
Forward Transconductance
V
DS
= V
GS
, I
D
= -250
μ
A
-2.0
--
-4.0
V
V
GS
= -10 V, I
D
= -8.25 A
--
0.14
0.19
V
DS
= -40 V, I
D
= -8.25 A
--
9.9
--
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
DS
= -25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
850
310
100
1100
400
130
pF
pF
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
V
DD
= -50 V, I
D
= -16.5 A,
R
G
= 25
--
--
--
--
--
--
--
17
200
45
100
30
4.8
17
45
410
100
210
39
--
--
ns
ns
ns
ns
nC
nC
nC
V
DS
= -80 V, I
D
= -16.5 A,
V
GS
= -10 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
--
--
--
--
--
--
--
--
-16.5
-66
-4.0
--
--
A
A
V
ns
μ
C
V
GS
= 0 V, I
S
= -16.5 A
V
GS
= 0 V, I
S
= -16.5 A,
dI
F
/ dt = 100 A/
μ
s
120
0.52
相關PDF資料 |
PDF描述 |
|---|---|
| FQI19N10L | 100V Logic N-Channel MOSFET(漏源電壓為100V的邏輯N溝道增強型MOS場效應管) |
| FQB19N10L | 100V Logic N-Channel MOSFET(漏源電壓為100V的邏輯N溝道增強型MOS場效應管) |
| FQI19N10 | 100V N-Channel MOSFET(漏源電壓為100V的N溝道增強型MOS場效應管) |
| FQB19N10 | 100V N-Channel MOSFET(漏源電壓為100V的N溝道增強型MOS場效應管) |
| FQI1N60 | 600V N-Channel MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FQI17P06TU | 功能描述:MOSFET -60V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQI17P10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:100V P-Channel MOSFET |
| FQI17P10TU | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQI19N10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:100V N-Channel MOSFET |
| FQI19N10L | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:100V LOGIC N-Channel MOSFET |
發布緊急采購，3分鐘左右您將得到回復。