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參數資料
| 型號： | FQI19N10 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 100V N-Channel MOSFET(漏源電壓為100V的N溝道增強型MOS場效應管) |
| 中文描述： | 19 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封裝： | ROHS COMPLIANT, I2PAK-3 |
| 文件頁數： | 9/9頁 |
| 文件大小： | 575K |
| 代理商： | FQI19N10 |
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Advance Information
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This datasheet contains the design specifications for
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Rev. F1
VCX
相關PDF資料 |
PDF描述 |
|---|---|
| FQB19N10 | 100V N-Channel MOSFET(漏源電壓為100V的N溝道增強型MOS場效應管) |
| FQI1N60 | 600V N-Channel MOSFET |
| FQB1N60 | 600V N-Channel MOSFET(漏源電壓為600V的N溝道增強型MOS場效應管) |
| FQI1P50 | 500V P-Channel MOSFET |
| FQI20N06L | 60V LOGIC N-Channel MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FQI19N10L | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:100V LOGIC N-Channel MOSFET |
| FQI19N10LTU | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQI19N10TU | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQI19N20 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V N-CHANNEL MOSFET |
| FQI19N20C | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V N-Channel MOSFET |
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