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參數資料
| 型號： | FQI6N80 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 800V N-Channel MOSFET |
| 中文描述： | 5.8 A, 800 V, 1.95 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封裝： | ROHS COMPLIANT, I2PAK-3 |
| 文件頁數： | 4/9頁 |
| 文件大小： | 683K |
| 代理商： | FQI6N80 |
2000 Fairchild Semiconductor International
F
Rev. A, September 2000
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
※
N otes :
1. Z
θ
J C
(t) = 0.7 9
℃
/W M ax.
2. D uty F a ctor, D =t
1
/t
2
3. T
J M
- T
C
= P
D M
* Z
θ
J C
(t)
sing le pu lse
D = 0.5
0 .02
0 .01
0 .2
0 .05
0 .1
Z
θ
(
t
1
, S q u a re W a ve P u lse D u ra tio n [se c]
25
50
75
100
125
150
0
1
2
3
4
5
6
I
D
,
T
C
, Case Temperature [
℃
]
10
0
10
V
DS
, Drain-Source Voltage [V]
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
10
μ
s
DC
10 ms
1 ms
100
μ
s
Operation in This Area
is Limited by R
DS(on)
※
Notes :
1. T
C
= 25
2. T
J
= 150
3. Single Pulse
o
C
o
C
I
D
,
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
※
Notes :
1. V
GS
= 10 V
2. I
D
= 2.9 A
R
D
,
D
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
※
Notes :
1. V
GS
= 0 V
2. I
D
= 250
μ
A
B
D
,
D
T
J
, Junction Temperature [
o
C]
Typical Characteristics
(Continued)
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Figure 11. Transient Thermal Response Curve
t
1
P
DM
t
2
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|---|---|
| FQB6N80 | 800V N-Channel MOSFET |
| FQI6N90 | 900V N-Channel MOSFET |
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| FQI6P25 | 250V P-Channel MOSFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FQI6N90 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:900V N-Channel MOSFET |
| FQI6N90TU | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQI6P25 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:250V P-Channel MOSFET |
| FQI6P25TU | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQI70N08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:80V N-Channel MOSFET |
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