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參數資料
型號: FQI7N10
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: V5 Series Miniature Basic Switch, Single Pole Normally Open Circuitry, 10 A at 250 Vac, Pin Plunger Actuator, 1,00 N [3.53 oz] Maximum Operating Force, Gold Contacts, Quick Connect Termination Silver/Silver Cadmium Oxide Contacts, Quick Connect Terminatio
中文描述: 7.3 A, 100 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262
封裝: I2PAK-3
文件頁數: 1/9頁
文件大小: 548K
代理商: FQI7N10
2000 Fairchild Semiconductor International
December 2000
Rev. A2, December 2000
F
QFET
TM
FQB7N10 / FQI7N10
100V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state
resistance,
provide
performance, and withstand high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as audio
amplifiers, high efficiency switching DC/DC converters, and
DC motor control.
superior
switching
Features
7.3A, 100V, R
DS(on)
= 0.35
@V
GS
= 10 V
Low gate charge ( typical 5.8 nC)
Low Crss ( typical 10 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175
°
C maximum junction temperature rating
! "
!
!
S
!
"
"
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQB7N10 / FQI7N10
100
7.3
5.15
29.2
±
25
50
7.3
4.0
6.0
3.75
40
0.27
-55 to +175
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
Parameter
Typ
--
--
--
Max
3.75
40
62.5
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
D
G
D
2
-PAK
FQB Series
I
2
-PAK
FQI Series
G
S
D
G
S
D
相關PDF資料
PDF描述
FQB7N20 200V N-Channel MOSFET(漏源電壓為200V的N溝道增強型MOSFET)
FQI7N20 200V N-Channel MOSFET(漏源電壓為200V的N溝道增強型MOSFET)
FQB7N30 300V N0Channel MOSFET
FQI7N30 300V N0Channel MOSFET
FQB7N40 400V N-Channel MOSFET(漏源電壓為400V的N溝道增強型MOSFET)
相關代理商/技術參數
參數描述
FQI7N10L 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:100V LOGIC N-Channel MOSFET
FQI7N10LTU 功能描述:MOSFET 100V N-Ch QFET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQI7N10TU 功能描述:MOSFET N-CH/100V/7.3A/0.35OHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQI7N20 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V N-Channel MOSFET
FQI7N20L 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V LOGIC N-Channel MOSFET
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