欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: FQI7N60
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 600V N-Channel MOSFET
中文描述: 7.4 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262
封裝: I2PAK-3
文件頁數: 2/9頁
文件大小: 591K
代理商: FQI7N60
2000 Fairchild Semiconductor International
F
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
Rev. A, April 2000
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 19.5mH, I
= 7.4A, V
DD
= 50V, R
= 25
,
Starting T
= 25°C
3. I
7.4A, di/dt
200A/
μ
s, V
DD
4. Pulse Test : Pulse width
300
μ
s, Duty cycle
5. Essentially independent of operating temperature
BV
Starting T
J
= 25°C
2%
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
/
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 250
μ
A
600
--
--
V
Breakdown Voltage Temperature
I
D
= 250
μ
A, Referenced to 25°C
--
0.67
--
V/°C
V
DS
= 600 V, V
GS
= 0 V
V
DS
= 480 V, T
C
= 125°C
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
--
--
--
--
--
--
--
--
10
100
100
-100
μ
A
μ
A
nA
nA
I
GSSF
I
GSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
V
GS(th)
Gate Threshold Voltage
R
DS(on)
Static Drain-Source
On-Resistance
g
FS
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
μ
A
3.0
--
5.0
V
V
GS
= 10 V, I
D
= 3.7 A
--
0.8
1.0
V
DS
= 50 V, I
D
= 3.7 A
--
6.4
--
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
1100
135
16
1430
175
21
pF
pF
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
V
DD
= 300 V, I
D
= 7.4 A,
R
G
= 25
--
--
--
--
--
--
--
30
80
65
60
29
7
14.5
70
170
140
130
38
--
--
ns
ns
ns
ns
nC
nC
nC
V
DS
= 480 V, I
D
= 7.4 A,
V
GS
= 10 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
--
--
--
--
--
--
--
--
7.4
29.6
1.4
--
--
A
A
V
ns
μ
C
V
GS
= 0 V, I
S
= 7.4 A
V
GS
= 0 V, I
S
= 7.4 A,
dI
F
/ dt = 100 A/
μ
s
320
2.4
相關PDF資料
PDF描述
FQB7N80 800V N-Channel MOSFET
FQI7N80 800V N-Channel MOSFET
FQB7P20 200V P-Channel MOSFET
FQI7P20 200V P-Channel MOSFET
FQB85N06 60V N-Channel MOSFET
相關代理商/技術參數
參數描述
FQI7N60TU 功能描述:MOSFET 600V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQI7N80 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:800V N-Channel MOSFET
FQI7N80TU 功能描述:MOSFET 800V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQI7P06 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:60V P-Channel MOSFET
FQI7P06TU 功能描述:MOSFET 60V P-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
主站蜘蛛池模板: 保德县| 新乡市| 慈利县| 台前县| 饶阳县| 延寿县| 大新县| 青河县| 仪陇县| 安福县| 天峻县| 甘南县| 虞城县| 石林| 务川| 普安县| 安庆市| 哈尔滨市| 寻甸| 和田市| 海兴县| 四川省| 台中市| 尚志市| 桃源县| 津市市| 桂阳县| 武冈市| 汨罗市| 射阳县| 监利县| 台山市| 嫩江县| 石林| 乐业县| 三门县| 平凉市| 阿坝县| 宁波市| 靖州| 当阳市|