欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號: FQI8N25
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 250V N-Channel MOSFET
中文描述: 8 A, 250 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262
封裝: I2PAK-3
文件頁數(shù): 1/9頁
文件大小: 593K
代理商: FQI8N25
2000 Fairchild Semiconductor International
May 2000
Rev. A, May 2000
F
QFET
TM
FQB8N25 / FQI8N25
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supply.
Features
8.0A, 250V, R
DS(on)
= 0.55
@V
GS
= 10 V
Low gate charge ( typical 12 nC)
Low Crss ( typical 11 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
! "
!
!
S
!
"
"
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQB8N25 / FQI8N25
250
8.0
5.0
32
±
30
120
8.0
8.7
5.5
3.13
87
0.69
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
* When mounted on the minimum pad size recommended (PCB Mount)
Parameter
Typ
--
--
--
Max
1.44
40
62.5
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
D
G
D
2
-PAK
FQB Series
I
2
-PAK
FQI Series
G
S
D
G
S
D
相關(guān)PDF資料
PDF描述
FQB8N60C 600V N-Channel MOSFET
FQI8N60C 600V N-Channel MOSFET
FQB8P10 100V P-Channel MOSFET
FQB90N08 80V N-Channel MOSFET
FQB95N03L N-Channel Logic Level PWM Optimized Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FQI8N60C 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V N-Channel MOSFET
FQI8N60CTU 功能描述:MOSFET 600V N-Channel Adv Q-FET C-Series RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQI8P10 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:100V P-Channel MOSFET
FQI8P10TU 功能描述:MOSFET P-CH/100V/8A/0.53OHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQI90N08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:80V N-Channel MOSFET
主站蜘蛛池模板: 城口县| 临夏市| 平安县| 梨树县| 乌苏市| 泸州市| 宝鸡市| 咸宁市| 儋州市| 徐汇区| 高清| 盈江县| 星子县| 呼伦贝尔市| 商都县| 贺州市| 沙河市| 罗山县| 新野县| 夏邑县| 滁州市| 固始县| 温州市| 德兴市| 东乡族自治县| 新干县| 敦化市| 云南省| 新乡县| 北海市| 苍梧县| 黄骅市| 临沭县| 武夷山市| 石城县| 张北县| 射洪县| 玛沁县| 绥芬河市| 连州市| 武平县|