欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號: FQI9N25C
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 250V N-Channel MOSFET
中文描述: 8.8 A, 250 V, 0.43 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: I2PAK-3
文件頁數(shù): 1/9頁
文件大小: 869K
代理商: FQI9N25C
2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
F
QFET
FQB9N25C/FQI9N25C
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
Features
8.8A, 250V, R
DS(on)
= 0.43
@V
GS
= 10 V
Low gate charge ( typical 26.5 nC)
Low Crss ( typical 45.5 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
Symbol
V
DSS
I
D
Parameter
FQB9N25C / FQI9N25C
250
8.8
5.6
35.2
±
30
285
8.8
7.4
5.5
3.13
74
0.59
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C)*
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
P
D
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
Parameter
Typ
--
--
--
Max
1.69
40
62.5
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient
{
S
{
{
D
G
D
2
-PAK
FQB Series
I
2
-PAK
FQI Series
G
S
D
G
S
D
相關PDF資料
PDF描述
FQB9N25 250V N-Channel MOSFET
FQI9N25 250V N-Channel MOSFET(漏源電壓為250V的N溝道增強型MOSFET)
FQB9P25 250V P-Channel MOSFET
FQBI9N50 500v N CHANNEL MOSFET
FQI9N50 64 Megabit, 3.0 Volt-Only Page Mode Flash Memory
相關代理商/技術參數(shù)
參數(shù)描述
FQI9N25CTU 功能描述:MOSFET 250V N-Channel Adv Q-FET C-Series RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQI9N30 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 9A I(D) | TO-262AA
FQI9N50 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:500v N CHANNEL MOSFET
FQI9N50C 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET
FQI9N50CTU 功能描述:MOSFET 500V N-Channel Adv Q-FET C-Series RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
主站蜘蛛池模板: 蓬莱市| 宜宾县| 霍山县| 咸宁市| 子长县| 浮山县| 禹城市| 安新县| 武汉市| 油尖旺区| 建始县| 宣汉县| 留坝县| 姚安县| 乡城县| 上虞市| 金寨县| 北辰区| 瓦房店市| 安阳市| 达州市| 盐池县| 剑阁县| 吉隆县| 平原县| 姚安县| 仲巴县| 蒲江县| 六枝特区| 固原市| 社旗县| 南召县| 天水市| 同仁县| 丰顺县| 河北省| 怀远县| 衡阳市| 布拖县| 泰宁县| 韩城市|