欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號: FQL40N50
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: CAP 0.1UF 50V 20% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22
中文描述: 40 A, 500 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
封裝: TO-264, 3 PIN
文件頁數(shù): 2/8頁
文件大小: 623K
代理商: FQL40N50
F
Rev. A1. May 2001
2001 Fairchild Semiconductor Corporation
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 2.0mH, I
= 40A, V
DD
= 50V, R
G
= 25
,
Starting T
= 25°C
3. I
40A, di/dt
200A/
μ
s, V
DD
BV
Starting T
J
= 25°C
4. Pulse Test : Pulse width
300
μ
s, Duty cycle
2%
5. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
/
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 250
μ
A
500
--
--
V
Breakdown Voltage Temperature
I
D
= 250
μ
A, Referenced to 25°C
--
0.48
--
V/°C
V
DS
= 500 V, V
GS
= 0 V
V
DS
= 400 V, T
C
= 125°C
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
--
--
--
--
--
--
--
--
1
10
100
-100
μ
A
μ
A
nA
nA
I
GSSF
I
GSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
V
GS(th)
Gate Threshold Voltage
R
DS(on)
Static Drain-Source
On-Resistance
g
FS
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
μ
A
3.0
--
5.0
V
V
GS
= 10 V, I
D
= 20 A
--
0.085
0.11
V
DS
= 50 V, I
D
= 20 A
--
29
--
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
5800
880
95
7500
1150
120
pF
pF
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
V
DD
= 250 V, I
D
= 40 A,
R
G
= 25
--
--
--
--
--
--
--
140
440
350
250
155
37
78
290
890
700
500
200
--
--
ns
ns
ns
ns
nC
nC
nC
V
DS
= 400 V, I
D
= 40 A,
V
GS
= 10 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
--
--
--
--
--
--
--
--
40
160
1.4
--
--
A
A
V
ns
μ
C
V
GS
= 0 V, I
S
= 40 A
V
GS
= 0 V, I
S
= 40 A,
dI
F
/ dt = 100 A/
μ
s
520
8.0
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
相關(guān)PDF資料
PDF描述
FQL50N40 CAP 1200PF 100V 5% NP0(C0G) DIP-2 TUBE-PAK S-MIL-PRF-39014/22
FQN1N50C 500V N-Channel MOSFET
FQN1N60C 600V N-Channel MOSFET
FQNL1N50B 500V N-Channel MOSFET
FQNL2N50B 500V N-Channel MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FQL40N50F 功能描述:MOSFET 500V N-Channel FRFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQL50N40 功能描述:MOSFET 400V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQM1CM002 制造商:OMRON AUTOMATION AND SAFETY 功能描述:PULSE MODULE 2 AXIS
FQM1-CM002 制造商:OMRON AUTOMATION AND SAFETY 功能描述:PULSE MODULE 2 AXIS 制造商:Omron Electronic Components LLC 功能描述:Coordinator Module 制造商:OMRON INDUSTRIAL AUTOMATION 功能描述:Coordinator Module
FQM1IC101 制造商:OMRON Industrial Automation 功能描述:ANALOG BASIC SET 2 AXES
主站蜘蛛池模板: 视频| 商南县| 仲巴县| 海伦市| 格尔木市| 中西区| 贞丰县| 泌阳县| 丹寨县| 富顺县| 新沂市| 亳州市| 巴彦县| 昌黎县| 定襄县| 衡水市| 浏阳市| 大埔区| 江川县| 浮梁县| 临夏县| 绿春县| 镇平县| 邻水| 丰县| 柳州市| 托克逊县| 嫩江县| 岑溪市| 巴青县| 鄂温| 大田县| 元阳县| 隆尧县| 卓资县| 太白县| 固始县| 松潘县| 中方县| 喜德县| 安岳县|