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參數資料
| 型號： | FQN1N60C |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 600V N-Channel MOSFET |
| 中文描述： | 300 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁數： | 2/8頁 |
| 文件大小： | 677K |
| 代理商： | FQN1N60C |
2
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FQN1N60C Rev. A
F
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 59mH, I
AS
= 1.1A, V
DD
= 50V, R
G
= 25
,
Starting T
J
= 25°C
3. I
SD
≤
0.3A, di/dt
≤
200A/
μ
s, V
DD
≤
BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300
μ
s, Duty cycle
≤
2%
5. Essentially independent of operating temperature
6. a) Reference point of the R
is the drain lead
b) When mounted on 3”x4.5” FR-4 PCB without any pad copper in a still air environment
(R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance. R
θ
CA
is determined by the user’s board design)
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
1N60C
FQN1N60C
TO-92
--
--
2000ea
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
DSS
BV
DSS
/
T
J
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25°C
600
--
--
V
Breakdown Voltage Temperature
Coefficient
--
0.6
--
V/°C
Zero Gate Voltage Drain Current
V
DS
= 600 V, V
GS
= 0 V
V
DS
= 480 V, T
C
= 125°C
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
--
--
50
μ
A
μ
A
--
--
250
I
GSSF
I
GSSR
Gate-Body Leakage Current, Forward
--
--
100
nA
Gate-Body Leakage Current, Reverse
--
--
-100
nA
On Characteristics
V
GS(th)
R
DS(on)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= 10 V, I
D
= 0.15 A
2.0
--
4.0
V
Static Drain-Source
On-Resistance
--
9.3
11.5
g
FS
Forward Transconductance
V
DS
= 40 V, I
D
= 0.3 A
(Note 4)
--
0.75
--
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
130
170
pF
Output Capacitance
--
19
25
pF
Reverse Transfer Capacitance
--
3.5
6
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
V
DD
= 300 V, I
D
= 1.1 A,
R
G
= 25
(Note 4, 5)
--
7
24
ns
Turn-On Rise Time
--
21
52
ns
Turn-Off Delay Time
--
13
36
ns
Turn-Off Fall Time
--
27
64
ns
Total Gate Charge
V
DS
= 480 V, I
D
= 1.1 A,
V
GS
= 10 V
(Note 4, 5)
--
4.8
6.2
nC
Gate-Source Charge
--
0.7
--
nC
Gate-Drain Charge
--
2.7
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Maximum Continuous Drain-Source Diode Forward Current
--
--
0.3
A
Maximum Pulsed Drain-Source Diode Forward Current
--
--
1.2
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 0.3 A
V
GS
= 0 V, I
S
= 1.1 A,
dI
F
/ dt = 100 A/
μ
s
(Note 4)
--
--
1.4
V
Reverse Recovery Time
--
190
--
ns
Q
rr
Reverse Recovery Charge
--
0.53
--
μ
C
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