- 您現在的位置：買賣IC網 > PDF目錄375886 > FQP140N03L (FAIRCHILD SEMICONDUCTOR CORP) 30V LOGIC N-Channel MOSFET PDF資料下載
參數資料
| 型號： | FQP140N03L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 30V LOGIC N-Channel MOSFET |
| 中文描述： | 140 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| 封裝： | TO-220, 3 PIN |
| 文件頁數： | 3/8頁 |
| 文件大小： | 589K |
| 代理商： | FQP140N03L |
2000 Fairchild Semiconductor International
F
Rev. A, April 2000
0
25
50
75
100
125
150
0
2
4
6
8
10
12
V
DS
= 15V
V
DS
= 24V
Note : I
D
= 140A
V
G
,
Q
G
, Total Gate Charge [nC]
10
-1
10
0
10
1
0
2000
4000
6000
8000
10000
12000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes :
1. V
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
V
DS
, Drain-Source Voltage [V]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
10
0
10
1
10
2
175
Notes :
1. V
= 0V
2. 250 s Pulse Test
25
I
D
,
V
SD
, Source-Drain voltage [V]
0
100
200
300
400
500
0.0
2.5
5.0
7.5
10.0
12.5
V
GS
= 10V
V
GS
= 5V
Note : T
J
= 25
R
D
]
D
I
D
, Drain Current [A]
0
2
4
6
8
10
10
0
10
1
10
2
175
25
-55
Notes :
1. V
= 15V
2. 250 s Pulse Test
I
D
,
V
GS
, Gate-Source Voltage [V]
10
-1
10
0
10
1
10
1
10
2
GS
V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
Notes :
1. 250 s Pulse Test
2. T
C
= 25
I
D
,
V
DS
, Drain-Source Voltage [V]
Typical Characteristics
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
相關PDF資料 |
PDF描述 |
|---|---|
| FQP14N15 | 150V N-Channel MOSFET |
| FQP14N15 | STEREO 200W CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING TECHNOLOGY |
| FQP14N30 | 300V N-Channel MOSFET |
| FQP16N15 | 150V N-Channel MOSFET |
| FQP16N15 | STEREO 200W CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING TECHNOLOGY |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FQP14N15 | 功能描述:MOSFET N-CH/150V/14.4A/0.21OHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQP14N30 | 功能描述:MOSFET 300V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQP15P12 | 功能描述:MOSFET 120V P-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQP16N15 | 功能描述:MOSFET 150V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQP16N25 | 功能描述:MOSFET 250V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。