欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: FQP20N06
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 60V N-Channel MOSFET
中文描述: 20 A, 60 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220, 3 PIN
文件頁數: 3/8頁
文件大小: 655K
代理商: FQP20N06
F
2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
2
4
6
8
10
10
-1
10
0
10
1
175
25
-55
Notes :
1. V
DS
= 25V
2. 250
μ
s Pulse Test
I
D
,
V
GS
, Gate-Source Voltage [V]
0
2
4
6
8
10
12
0
2
4
6
8
10
12
V
DS
= 30V
V
DS
= 48V
Note : I
D
= 20A
V
G
,
Q
G
, Total Gate Charge [nC]
10
-1
10
0
10
1
0
400
800
1200
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes :
1. V
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
V
DS
, Drain-Source Voltage [V]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
-1
10
0
10
1
175
Notes :
1. V
GS
= 0V
2. 250
μ
s Pulse Test
25
I
D
,
V
SD
, Source-Drain voltage [V]
0
10
20
30
40
50
60
0
20
40
60
80
100
V
GS
= 20V
V
GS
= 10V
Note : T
J
= 25
R
D
Ω
D
I
D
, Drain Current [A]
10
-1
10
0
10
1
10
0
10
1
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
Bottom : 5.0 V
Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25
I
D
,
V
DS
, Drain-Source Voltage [V]
Typical Characteristics
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
相關PDF資料
PDF描述
FQP22N30 300V N-Channel MOSFET
FQP22P10 100V P-Channel MOSFET
FQP24N08 80V N-Channel MOSFET
FQP27P06 Inductor; Inductor Type:Standard; Inductance:217uH; Series:CMS; DC Resistance Max:0.02ohm; Package/Case:PCB Surface Mount; Core Material:Ferrite; Current, It rms:2.85A; Leaded Process Compatible:Yes; Leakage Inductance:1.9uH RoHS Compliant: Yes
FQP27N25 250V N-Channel MOSFET
相關代理商/技術參數
參數描述
FQP20N06_Q 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQP20N06L 功能描述:MOSFET 60V N-Channel QFET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQP20N06TSTU 功能描述:MOSFET 60V N-Channel QFET Short Leads RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQP22N30 功能描述:MOSFET 300V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQP22N30 制造商:Fairchild Semiconductor Corporation 功能描述:Transistor
主站蜘蛛池模板: 彩票| 收藏| 金堂县| 南岸区| 高安市| 行唐县| 达拉特旗| 平定县| 花莲市| 离岛区| 巨野县| 东丰县| 丰都县| 屏南县| 普兰店市| 专栏| 安远县| 巨野县| 天峨县| 宁陕县| 泸定县| 康乐县| 化德县| 诸暨市| 南康市| 卢氏县| 普陀区| 青海省| 武安市| 呼伦贝尔市| 龙口市| 阆中市| 焦作市| 花莲市| 宝坻区| 望奎县| 呼伦贝尔市| 西城区| 宜兰县| 常州市| 任丘市|