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參數資料
| 型號： | FQP20N06L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 60V LOGIC N-Channel MOSFET |
| 中文描述： | 21 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數： | 3/8頁 |
| 文件大?。?/td> | 673K |
| 代理商： | FQP20N06L |
F
2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
0
4
8
12
16
20
0
2
4
6
8
10
12
V
DS
= 30V
V
DS
= 48V
※
Note : I
D
= 21A
V
G
,
Q
G
, Total Gate Charge [nC]
10
-1
10
0
10
1
0
500
1000
1500
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
※
Notes :
1. V
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
V
DS
, Drain-Source Voltage [V]
0.2
0.4
0.6
V
SD
, Source-Drain voltage [V]
0.8
1.0
1.2
1.4
1.6
10
-1
10
0
10
1
175
℃
※
Notes :
1. V
GS
= 0V
2. 250
μ
s Pulse Test
25
℃
I
D
,
0
10
20
30
40
50
60
0
20
40
60
80
100
V
GS
= 10V
V
GS
= 5V
※
Note : T
J
= 25
℃
R
D
Ω
D
I
D
, Drain Current [A]
0
2
4
6
8
10
10
-1
10
0
10
1
175
℃
25
℃
-55
℃
※
Notes :
1. V
DS
= 25V
2. 250
μ
s Pulse Test
I
D
,
V
GS
, Gate-Source Voltage [V]
10
-1
10
0
10
1
10
0
10
1
GS
V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
※
Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25
℃
I
D
,
V
DS
, Drain-Source Voltage [V]
Typical Characteristics
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
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| FQP20N06TSTU | 功能描述:MOSFET 60V N-Channel QFET Short Leads RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQP22N30 | 功能描述:MOSFET 300V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQP22N30 | 制造商:Fairchild Semiconductor Corporation 功能描述:Transistor |
| FQP22P10 | 功能描述:MOSFET 100V P-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQP24N08 | 功能描述:MOSFET 80V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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