- 您現在的位置：買賣IC網 > PDF目錄375888 > FQP5N20L (FAIRCHILD SEMICONDUCTOR CORP) 200V LOGIC N-Channel MOSFET PDF資料下載
參數資料
| 型號： | FQP5N20L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 200V LOGIC N-Channel MOSFET |
| 中文描述： | 4.5 A, 200 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數： | 2/8頁 |
| 文件大小： | 605K |
| 代理商： | FQP5N20L |
Rev. A1, August 2001
F
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
2001 Fairchild Semiconductor Corporation
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 4.44mH, I
= 4.5A, V
DD
= 50V, R
G
= 25
,
Starting T
= 25°C
3. I
≤
4.5A, di/dt
≤
300A/
μ
s, V
DD
≤
BV
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300
μ
s, Duty cycle
≤
2%
5. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
/
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 250
μ
A
200
--
--
V
Breakdown Voltage Temperature
I
D
= 250
μ
A, Referenced to 25°C
--
0.18
--
V/°C
V
DS
= 200 V, V
GS
= 0 V
V
DS
= 160 V, T
C
= 125°C
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
--
--
--
--
--
--
--
--
1
10
100
-100
μ
A
μ
A
nA
nA
I
GSSF
I
GSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
V
GS(th)
Gate Threshold Voltage
R
DS(on)
Static Drain-Source
On-Resistance
g
FS
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= 10 V, I
D
= 2.25 A
V
GS
= 5 V, I
D
= 2.25 A
V
DS
= 30 V, I
D
= 2.25 A
1.0
--
2.0
1.2
1.25
--
V
--
0.94
0.98
3.6
--
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
250
40
6
325
50
8
pF
pF
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
V
DD
= 100 V, I
D
= 4.5 A,
R
G
= 25
--
--
--
--
--
--
--
9
90
15
50
4.8
1.2
2.4
25
190
40
110
6.2
--
--
ns
ns
ns
ns
nC
nC
nC
V
DS
= 160 V, I
D
= 4.5 A,
V
GS
= 5 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
--
--
--
--
--
--
--
--
95
0.3
4.5
18
1.5
--
--
A
A
V
ns
μ
C
V
GS
= 0 V, I
S
= 4.5 A
V
GS
= 0 V, I
S
= 4.5 A,
dI
F
/ dt = 100 A/
μ
s
相關PDF資料 |
PDF描述 |
|---|---|
| FQP5N30 | 300V N-Channel MOSFET |
| FQP5N40 | 400V N-Channel MOSFET |
| FQP5N50C | 500V N-Channel MOSFET |
| FQPF5N50C | 500V N-Channel MOSFET |
| FQP5N50 | 500V N CHANNEL MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FQP5N30 | 功能描述:MOSFET 300V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQP5N40 | 功能描述:MOSFET 400V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQP5N50 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:500V N CHANNEL MOSFET |
| FQP5N50C | 功能描述:MOSFET 500V N-Ch Q-FET advance C-Series RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQP5N50C_F080 | 制造商:Fairchild 功能描述:500V/5A N-CH MOSFET C-SERIES |
發布緊急采購，3分鐘左右您將得到回復。