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參數資料
| 型號： | FQP6N40CF |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 400V N-Channel MOSFET |
| 中文描述： | 6 A, 400 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 1063K |
| 代理商： | FQP6N40CF |
2005 Fairchild Semiconductor Corporation
FQP6N40CF Rev. A
1
www.fairchildsemi.com
F
QFET
FQP6N40CF
400V N-Channel MOSFET
Features
6A, 400V, R
DS(on)
= 1.1
@V
GS
= 10 V
Low gate charge ( typical 16nC)
Low Crss ( typical 15pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Fast recovery body diode (typical 70ns)
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
ciency switched mode power supplies, electronic lamp ballasts
based on half bridge topology.
Absolute Maximum Ratings
* Drain current limited by maximum junction temperature
Thermal Characteristics
TO-220
FQP Series
G
S
D
●
●
●
●
●
●
▲
{
{
S
{
{
{
{
D
G
Symbol
Parameter
FQP6N40CF
Units
V
DSS
I
D
Drain-Source Voltage
400
V
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
6
A
3.6
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
24
A
Gate-Source Voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
270
mJ
Avalanche Current
(Note 1)
6
A
Repetitive Avalanche Energy
(Note 1)
73
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation (T
C
= 25°C)
73
W
- Derate above 25°C
0.58
W/°C
T
J
, T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°C
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
300
°C
Symbol
Parameter
FQP6N40CF
Units
R
θ
JC
R
θ
CS
R
θ
JA
Thermal Resistance, Junction-to-Case
1.71
°C
/
W
Thermal Resistance, Case-to-Sink
0.5
°C
/
W
Thermal Resistance, Junction-to-Ambient
62.5
°C
/
W
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FQP6N40CF_06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:400V N-Channel MOSFET |
| FQP6N40CF_12 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:400V N-Channel MOSFET |
| FQP6N40CNBEC003 | 制造商:Fairchild Semiconductor Corporation 功能描述:Trans MOSFET N-CH 400V 6A 3-Pin(3+Tab) TO-220AB Rail |
| FQP6N40L | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FQP6N45 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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