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參數(shù)資料
型號: FQP6P25
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 250V P-Channel MOSFET
中文描述: 6 A, 250 V, 1.1 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220, 3 PIN
文件頁數(shù): 3/8頁
文件大小: 508K
代理商: FQP6P25
2000 Fairchild Semiconductor International
F
Rev. A, April 2000
0
4
8
12
16
20
24
0
2
4
6
8
10
12
V
DS
= -125V
V
DS
= -200V
V
DS
= -50V
Note : I
D
= -6.0 A
-
G
,
Q
G
, Total Gate Charge [nC]
10
-1
10
0
10
1
0
200
400
600
800
1000
1200
1400
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes :
1. V
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
-V
DS
, Drain-Source Voltage [V]
0.0
0.5
1.0
1.5
2.0
2.5
3.0
10
-1
10
0
10
1
25
150
Notes :
1. V
= 0V
2. 250 s Pulse Test
-
D
-V
SD
, Source-Drain Voltage [V]
0
4
8
12
16
20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Note : T
J
= 25
V
GS
= - 20V
V
GS
= - 10V
R
D
]
D
-I
D
, Drain Current [A]
2
4
6
8
10
10
-1
10
0
10
1
Notes :
1. V
= -40V
2. 250 s Pulse Test
-55
150
25
-
D
-V
GS
, Gate-Source Voltage [V]
10
-1
10
0
10
1
10
-1
10
0
10
1
GS
V
-10 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
Bottom : -5.5 V
Notes :
1. 250 s Pulse Test
2. T
C
= 25
-
D
-V
DS
, Drain-Source Voltage [V]
Typical Characteristics
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
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參數(shù)描述
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