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參數資料
| 型號： | FQP70N10 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | CAP 100PF 200V 1% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22 |
| 中文描述： | 57 A, 100 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數： | 3/8頁 |
| 文件大小： | 636K |
| 代理商： | FQP70N10 |
F
Rev. B, August 2000
2000 Fairchild Semiconductor International
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
10
-1
10
0
10
1
10
2
25
℃
175
℃
※
Notes :
1. V
GS
= 0V
2. 250
μ
s Pulse Test
I
D
V
SD
, Source-Drain Voltage [V]
2
4
6
8
10
10
-1
10
0
10
1
10
2
※
Notes :
1. V
DS
= 40V
2. 250
μ
s Pulse Test
-55
℃
175
℃
25
℃
I
D
V
GS
, Gate-Source Voltage [V]
10
-1
10
0
10
1
10
0
10
1
10
2
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
※
Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25
℃
I
D
,
V
DS
, Drain-Source Voltage [V]
0
10
20
30
Q
G
, Total Gate Charge [nC]
40
50
60
70
80
90
100
0
2
4
6
8
10
12
V
DS
= 50V
V
DS
= 80V
※
Note : I
D
= 70A
V
G
,
10
-1
10
0
10
1
0
1000
2000
3000
4000
5000
6000
7000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
※
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
V
DS
, Drain-Source Voltage [V]
0
60
120
180
240
300
0
16
32
48
64
80
※
Note : T
J
= 25
℃
V
GS
= 20V
V
GS
= 10V
R
D
Ω
]
D
I
D
, Drain Current [A]
Typical Characteristics
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FQP70N10 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N TO-220 |
| FQP7N10 | 功能描述:MOSFET 100V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQP7N10 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N TO-220 |
| FQP7N10L | 功能描述:MOSFET 100V N-Ch QFET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQP7N20 | 功能描述:MOSFET 200V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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