欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: FQP7N10
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: V5 Series Miniature Basic Switch, Single Pole Normally Open Circuitry, 10 A at 250 Vac, Straight Lever Actuator, 0,60 N [2.1 oz] Maximum Operating Force Silver/Silver Cadmium Oxide Contacts, Quick Connect Termination, CE, VDE, SEMKO
中文描述: 7.3 A, 100 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220, 3 PIN
文件頁數: 2/8頁
文件大?。?/td> 537K
代理商: FQP7N10
Rev. A2, December2000
F
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
2000 Fairchild Semiconductor International
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.4mH, I
= 7.3A, V
DD
= 25V, R
G
= 25
,
Starting T
= 25°C
3. I
7.3A, di/dt
300A/
μ
s, V
DD
BV
Starting T
J
= 25°C
4. Pulse Test : Pulse width
300
μ
s, Duty cycle
2%
5. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
/
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 250
μ
A
100
--
--
V
Breakdown Voltage Temperature
I
D
= 250
μ
A, Referenced to 25°C
--
0.1
--
V/°C
V
DS
= 100 V, V
GS
= 0 V
V
DS
= 80 V, T
C
= 150°C
V
GS
= 25 V, V
DS
= 0 V
V
GS
= -25 V, V
DS
= 0 V
--
--
--
--
--
--
--
--
1
10
100
-100
μ
A
μ
A
nA
nA
I
GSSF
I
GSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
V
GS(th)
Gate Threshold Voltage
R
DS(on)
Static Drain-Source
On-Resistance
g
FS
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
μ
A
2.0
--
4.0
V
V
GS
= 10 V, I
D
= 3.65 A
--
0.28
0.35
V
DS
= 40 V, I
D
= 3.65 A
--
3.6
--
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
190
60
10
250
75
13
pF
pF
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
V
DD
= 50 V, I
D
= 7.3 A,
R
G
= 25
--
--
--
--
--
--
--
7
24
13
19
5.8
1.4
2.5
25
60
35
50
7.5
--
--
ns
ns
ns
ns
nC
nC
nC
V
DS
= 80 V, I
D
= 7.3 A,
V
GS
= 10 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
--
--
--
--
--
--
--
--
70
150
7.3
29.2
1.5
--
--
A
A
V
ns
nC
V
GS
= 0 V, I
S
= 7.3 A
V
GS
= 0 V, I
S
= 7.3 A,
dI
F
/ dt = 100 A/
μ
s
相關PDF資料
PDF描述
FQP7N20L 200V LOGIC N-Channel MOSFET
FQP7N20 200V N-Channel MOSFET
FQP7N40 400V N-Channel MOSFET
FQP7N60 600V N-Channel MOSFET
FQP7N65C 650V N-Channel MOSFET
相關代理商/技術參數
參數描述
FQP7N10 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N TO-220
FQP7N10L 功能描述:MOSFET 100V N-Ch QFET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQP7N20 功能描述:MOSFET 200V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQP7N20L 功能描述:MOSFET 200V N-Ch QFET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQP7N30 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 7A I(D) | TO-220
主站蜘蛛池模板: 辽阳市| 奈曼旗| 普安县| 安塞县| 房山区| 禹州市| 恩施市| 绥中县| 和静县| 防城港市| 玉溪市| 东方市| 隆尧县| 会泽县| 澳门| 扎鲁特旗| 静宁县| 安丘市| 双辽市| 阳东县| 定西市| 舒兰市| 营口市| 商都县| 靖宇县| 阿克| 望奎县| 阿鲁科尔沁旗| 瑞昌市| 新余市| 周宁县| 延寿县| 大同市| 工布江达县| 赞皇县| 兴宁市| 漳州市| 长白| 纳雍县| 武邑县| 正阳县|