欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: FQPF18N50V2
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 500V N-Channel MOSFET
中文描述: 18 A, 500 V, 0.265 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: LEAD FREE, TO-220F, 3 PIN
文件頁數: 1/10頁
文件大小: 839K
代理商: FQPF18N50V2
2002 Fairchild Semiconductor Corporation
F
QF E T
TM
Rev. B, August 2002
FQP18N50V2/FQPF18N50V2
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficient switched mode power supplies,
active power factor correction, electronic lamp ballast
based on half bridge topology.
Features
18A, 500V, R
DS(on)
= 0.265
@V
GS
= 10 V
Low gate charge ( typical 42 nC)
Low Crss ( typical 11 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQP18N50V2
FQPF18N50V2
500
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
18
12.1
72
18
12.1
72
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 1)
±
30
330
18
25
4.5
(Note 2)
(Note 1)
(Note 1)
(Note 3)
208
1.67
69
0.55
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
-55 to +150
T
L
300
°C
Symbol
R
θ
JC
R
θ
CS
R
θ
JA
Parameter
FQP18N50V2
0.6
0.5
62.5
FQPF18N50V2
1.8
--
62.5
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
TO-220
FQP Series
G
S
D
TO-220F
FQPF Series
G
S
D
!
!
!
S
!
!
!
!
D
G
相關PDF資料
PDF描述
FQP19N10L 100V LOGIC N-Channel MOSFET
FQP19N10 GIGATRUE CAT6 UNIVERSAL JACK, ORANGE 25 PACK
FQP19N20 200V N-Channel MOSFET
FQP19N20L 200V LOGIC N-Channel MOSFET
FQP1N50 500V N-Channel MOSFET
相關代理商/技術參數
參數描述
FQPF18N50V2SDTU 功能描述:MOSFET 500V/18A/.265ohm/NCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQPF18N50V2T 功能描述:MOSFET 200V N-Ch adv QFET V2 Series RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQPF19N10 功能描述:MOSFET 100V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQPF19N10L 功能描述:MOSFET 100V N-Ch QFET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQPF19N20 功能描述:MOSFET 200V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
主站蜘蛛池模板: 郸城县| 衡南县| 天水市| 胶南市| 临桂县| 剑阁县| 松潘县| 上杭县| 乌鲁木齐市| 惠州市| 施秉县| 乌审旗| 文山县| 灵璧县| 津市市| 麻阳| 杨浦区| 乐陵市| 且末县| 凌海市| 万年县| 巴里| 米易县| 冕宁县| 亚东县| 托克逊县| 邮箱| 大田县| 靖安县| 壶关县| 翁牛特旗| 安陆市| 加查县| 屯昌县| 新兴县| 深泽县| 理塘县| 滦平县| 雅江县| 五家渠市| 开封市|