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參數資料
| 型號： | FQPF32N12V2 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 120V N-Channel MOSFET |
| 中文描述： | 32 A, 120 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數： | 4/10頁 |
| 文件大小： | 857K |
| 代理商： | FQPF32N12V2 |
Rev. A, December 2003
F
2003 Fairchild Semiconductor Corporation
Typical Characteristics
(Continued)
Figure 10. Maximum Drain Current
vs Case Temperature
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
10
3
DC
10 ms
1 ms
100
μ
s
Operation in This Area
is Limited by R
DS(on)
※
Notes :
1. T
C
= 25
2. T
= 175
3. Single Pulse
o
C
o
C
I
D
,
V
DS
, Drain-Source Voltage [V]
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
10
3
DC
10 ms
1 ms
100
μ
s
Operation in This Area
is Limited by R
DS(on)
※
Notes :
1. T
C
= 25
2. T
= 175
3. Single Pulse
o
C
o
C
I
D
,
V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
175
0
5
10
15
20
25
30
35
I
D
,
T
C
, Case Temperature [
℃
]
Figure 9-1. Maximum Safe Operating Area
for FQP32N12V2
Figure 9-2. Maximum Safe Operating Area
for FQPF32N12V2
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
※
Notes :
1. V
= 0 V
2. I
D
= 250
μ
A
B
D
,
D
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
※
Notes :
1. V
GS
= 10 V
2. I
D
= 16 A
R
D
,
D
T
J
, Junction Temperature [
o
C]
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
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| FQPF32N20C | 功能描述:MOSFET 200V N-Channel Advance Q-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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