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參數(shù)資料
型號: FQPF44N10
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 100V N-Channel MOSFET
中文描述: 27 A, 100 V, 0.039 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: TO-220F, 3 PIN
文件頁數(shù): 1/8頁
文件大小: 667K
代理商: FQPF44N10
2000 Fairchild Semiconductor International
August 2000
Rev. A, August 2000
F
QFET
TM
FQPF44N08
80V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, high
efficiency switching for DC/DC converters, and DC motor
control.
Features
25A, 80V, R
DS(on)
= 0.034
@V
GS
= 10 V
Low gate charge ( typical 38 nC)
Low Crss ( typical 90 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175
°
C maximum junction temperature rating
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQPF44N08
80
25
17.7
100
±
25
450
25
4.1
6.5
41
0.27
-55 to +175
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
Parameter
Typ
--
--
Max
3.7
62.5
Units
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
! "
!
!
S
!
"
"
D
G
TO-220F
FQPF Series
G
S
D
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FQPF47P06YDTU 功能描述:MOSFET -60V -30A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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