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參數(shù)資料
| 型號： | FQPF90N10V2 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 100V N-Channel MOSFET |
| 中文描述： | 90 A, 100 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數(shù)： | 4/10頁 |
| 文件大小： | 921K |
| 代理商： | FQPF90N10V2 |
Rev. A1, April 2004
F
2004 Fairchild Semiconductor Corporation
Typical Characteristics
(Continued)
Figure 10. Maximum Drain Current
vs Case Temperature
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes :
1. V
GS
= 0 V
2. I
D
= 250
μ
A
B
D
,
D
T
J
, Junction Temperature [
°
C]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :
1. V
GS
= 10 V
2. I
D
= 45 A
R
D
,
D
T
J
, Junction Temperature [
°
C]
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
10
3
10
μ
s
DC
10 ms
1 ms
100
μ
s
Operation in This Area
is Limited by R
DS(on)
Notes :
1. T
C
= 25
°
C
2. T
J
= 175
°
C
3. Single Pulse
I
D
,
V
DS
, Drain-Source Voltage [V]
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
10
3
10
μ
s
DC
10 ms
1 ms
100
μ
s
Operation in This Area
is Limted by R
DS(on)
Notes :
1. T
C
= 25
°
C
2. T
J
= 175
°
C
3. Single Pulse
I
D
,
V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
175
0
10
20
30
40
50
60
70
80
90
100
I
D
,
T
C
, Case Temperature [
°
C]
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Figure 9-1. Maximum Safe Operating Area
for FQP90N10V2
Figure 9-2. Maximum Safe Operating Area
for FQPF90N10V2
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