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參數資料
| 型號： | FQS4900 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual N & P-Channel, Logic Level MOSFET |
| 中文描述： | 1.3 A, 60 V, 0.65 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SOP-8 |
| 文件頁數： | 6/9頁 |
| 文件大?。?/td> | 1100K |
| 代理商： | FQS4900 |
2000 Fairchild Semiconductor International
F
Rev. A, August 2000
25
50
75
100
125
150
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
-
D
,
T
C
, Case Temperature [
℃
]
10
0
10
1
10
2
10
-3
10
-2
10
-1
10
0
10
1
1 ms
1 s
10 s
DC
100 ms
10 ms
Operation in This Area
is Limited by R
DS(on)
※
Notes :
1. T
C
= 25
2. T
J
= 150
3. Single Pulse
o
C
o
C
-
D
,
-V
DS
, Drain-Source Voltage [V]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
※
Notes :
1. V
= -10 V
2. I
D
= -0.15 A
R
D
,
D
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
※
Notes :
1. V
= 0 V
2. I
D
= -250
μ
A
-
D
,
D
T
J
, Junction Temperature [
o
C]
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
-1
10
0
10
1
0.01
※
N ote s :
1. Z
θ
2. D u ty F actor, D =t
1
/t
2
3. T
J M
- T
C
= P
D M
* Z
θ
JC
(t) = 62.5
℃
/W M a x.
JC
(t)
single pulse
D =0.5
0.02
0.2
0.05
0.1
Z
θ
J
(
t
1
, S quare W ave P ulse D uration [sec]
Typical Characteristics : P-Channel
(Continued)
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
Figure 11. Transient Thermal Response Curve
t
1
P
DM
t
2
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FQS4900TF | 功能描述:MOSFET N-Ch 60V/ P-Ch 300V Dual QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQS4900TF_Q | 功能描述:MOSFET N-Ch 60V/ P-Ch 300V Dual QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQS4901 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:400V Dual N-Channel MOSFET |
| FQS4901 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SO-8 |
| FQS4901TF | 功能描述:MOSFET 400V Dual N-Ch QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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