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參數(shù)資料
| 型號(hào)： | FQU19N10 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 100V N-Channel MOSFET(漏源電壓為100V、漏電流為5.6A的N溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 15.6 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封裝： | ROHS COMPLIANT, IPAK-3 |
| 文件頁(yè)數(shù)： | 9/9頁(yè) |
| 文件大小： | 589K |
| 代理商： | FQU19N10 |
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This datasheet contains the design specifications for
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Rev. F1
VCX
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PDF描述 |
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| FQD1N50B | 500V N-Channel MOSFET |
| FQD1N50 | 500V N-Channel MOSFET |
| FQU1N50 | 500V N-Channel MOSFET |
| FQU1N50B | 500V N-Channel MOSFET |
| FQD1N60C | 600V N-Channel MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FQU19N10_09 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:100V N-Channel MOSFET |
| FQU19N10L | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:100V LOGIC N-Channel MOSFET |
| FQU19N10LTU | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQU19N10TU | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQU1N50 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET |
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