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參數資料
| 型號： | FRE9160D |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 30A, -100V, 0.095 Ohm, Rad Hard, P-Channel Power MOSFETs |
| 中文描述： | 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA |
| 封裝： | HERMETIC SEALED, METAL, TO-258AA, 3 PIN |
| 文件頁數： | 3/6頁 |
| 文件大小： | 49K |
| 代理商： | FRE9160D |
3
Post-Radiation Electrical Specifications
TC = +25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TYPE
TEST CONDITIONS
LIMITS
UNITS
MIN
MAX
Drain-Source
Breakdown Volts
(Note 4, 6)
BVDSS
FRE9160D, R
VGS = 0, ID = 1mA
-100
-
V
(Note 5, 6)
BVDSS
FRE9160H
VGS = 0, ID = 1mA
-95
-
V
Gate-Source
Threshold Volts
(Note 4, 6)
VGS(th)
FRE9160D, R
VGS = VDS, ID = 1mA
-2.0
-4.0
V
(Note 3, 5, 6)
VGS(th)
FRE9160H
VGS = VDS, ID = 1mA
-2.0
-6.0
V
Gate-Body
Leakage Forward
(Note 4, 6)
IGSSF
FRE9160D, R
VGS = -20V, VDS = 0
-
100
nA
(Note 5, 6)
IGSSF
FRE9160H
VGS = -20V, VDS = 0
-
200
nA
Gate-Body
Leakage Reverse
(Note 2, 4, 6)
IGSSR
FRE9160D, R
VGS = 20V, VDS = 0
-
100
nA
(Note 2, 5, 6)
IGSSR
FRE9160H
VGS = 20V, VDS = 0
-
200
nA
Zero-Gate Voltage
Drain Current
(Note 4, 6)
IDSS
FRE9160D, R
VGS = 0, VDS = -80V
-
25
μ
A
(Note 5, 6)
IDSS
FRE9160H
VGS = 0, VDS = -80V
-
100
μ
A
Drain-Source
On-State Volts
(Note 1, 4, 6)
VDS(on)
FRE9160D, R
VGS = -10V, ID = 30A
-
-2.99
V
(Note 1, 5, 6)
VDS(on)
FRE9160H
VGS = -16V, ID = 30A
-
-4.49
V
Drain-Source
On Resistance
(Note 1, 4, 6)
RDS(on)
FRE9160D, R
VGS = -10V, ID = 19A
-
0.095
(Note 1, 5, 6)
RDS(on)
FRE9160H
VGS = -14V, ID = 19A
-
0.143
NOTES:
1. Pulse test, 300
μ
s max
2. Absolute value
3. Gamma = 300KRAD(Si)
4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 3E13
5. Gamma = 1000KRAD(Si). Neutron = 3E13
6. Insitu Gamma bias must be sampled for both VGS = -10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS
7. Gamma data taken 6/8/90 on TA17761 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA, PA
19401
8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989
9. Neutron derivation, Intersil Application Note AN8831, Oct. 1988
FRE9160D, FRE9160R, FRE9160H
相關PDF資料 |
PDF描述 |
|---|---|
| FRE9160H | 30A, -100V, 0.095 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRE9160R | 30A, -100V, 0.095 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRE9260D | 19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRE9260H | 19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRE9260R | HDWR FRAME SNAP-IN .062 BLACK |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FRE9160H | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:30A, -100V, 0.095 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRE9160R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:30A, -100V, 0.095 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRE9260D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRE9260H | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRE9260R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs |
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