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參數資料
| 型號： | FRF450H |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 9A, 500V, 0.615 Ohm, Rad Hard, N-Channel Power MOSFETs |
| 中文描述： | 0.615 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 封裝： | HERMETIC SEALED, METAL, TO-254AA, 3 PIN |
| 文件頁數： | 2/6頁 |
| 文件大小： | 48K |
| 代理商： | FRF450H |
4-2
Pre-Radiation Electrical Specifications
TC = +25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN
MAX
Drain-Source Breakdown Volts
BVDSS
VGS = 0, ID = 1mA
500
-
V
Gate-Threshold Volts
VGS(th)
VDS = VGS, ID = 1mA
2.0
4.0
V
Gate-Body Leakage Forward
IGSSF
VGS = +20V
-
100
nA
Gate-Body Leakage Reverse
IGSSR
VGS = -20V
-
100
nA
Zero-Gate Voltage
Drain Current
IDSS1
IDSS2
IDSS3
VDS = 500V, VGS = 0
VDS = 400V, VGS = 0
VDS = 400V, VGS = 0, TC = +125
o
C
-
-
-
1
0.025
0.25
mA
Rated Avalanche Current
IAR
Time = 20
μ
s
-
27
A
Drain-Source On-State Volts
VDS(on)
VGS = 10V, ID = 9A
-
5.81
V
Drain-Source On Resistance
RDS(on)
VGS = 10V, ID = 6A
-
0.615
Turn-On Delay Time
td(on)
VDD = 250V, ID = 9A
-
148
ns
Rise Time
tr
Pulse Width = 3
μ
s
-
196
Turn-Off Delay Time
td(off)
Period = 300
μ
s, Rg = 25
-
800
Fall Time
tf
0
≤
VGS
≤
10 (See Test Circuit)
-
180
Gate-Charge Threshold
QG(th)
VDD = 250V, ID = 9A
IGS1 = IGS2
0
≤
VGS
≤
20
4
16
nc
Gate-Charge On State
QG(on)
66
264
Gate-Charge Total
QGM
121
486
Plateau Voltage
VGP
3
12
V
Gate-Charge Source
QGS
14
56
nc
Gate-Charge Drain
QGD
31
126
Diode Forward Voltage
VSD
ID = 9A, VGD = 0
0.6
1.8
V
Reverse Recovery Time
TT
I = 9A; di/dt = 100A/
μ
s
-
3000
ns
Junction-To-Case
R
θ
jc
-
1.0
o
C/W
Junction-To-Ambient
R
θ
ja
Free Air Operation
-
48
FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT
V
DS
DUT
R
GS
0V
V
GS
= 12V
V
DD
R
L
t
P
V
GS
≤
20V
L
+
-
V
DS
V
DD
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
50
50
50V-150V
I
AS
+
-
ELECTRONIC SWITCH OPENS
WHEN I
AS
IS REACHED
CURRENT
TRANSFORMER
FRF450D, FRF450R, FRF450H
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FRF450R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:9A, 500V, 0.615 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRF501G | 功能描述:整流器 5.0 Amp 50 Volt 150ns RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| FRF501G C0 | 制造商:SKMI/Taiwan 功能描述:Diode Switching 50V 5A 3-Pin(3+Tab) ITO-220AB Tube |
| FRF501G_1 | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:Isolated 5.0 AMPS. Glass Passivated Fast Recovery Rectifiers |
| FRF502G | 功能描述:整流器 5.0 Amp 100 Volt 150ns RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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