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參數(shù)資料
| 型號： | FRK160R |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 50A, 100V, 0.040 Ohm, Rad Hard, N-Channel Power MOSFETs |
| 中文描述： | 50 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 48K |
| 代理商： | FRK160R |
4-3
Post-Radiation Electrical Specifications
TC = +25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TYPE
TEST CONDITIONS
LIMITS
UNITS
MIN
MAX
Drain-Source
Breakdown Volts
(Note 4, 6)
BVDSS
FRK160D, R
VGS = 0, ID = 1mA
100
-
V
(Note 5, 6)
BVDSS
FRK160H
VGS = 0, ID = 1mA
95
-
V
Gate-Source
Threshold Volts
(Note 4, 6)
VGS(th)
FRK160D, R
VGS = VDS, ID = 1mA
2.0
4.0
V
(Note 3, 5, 6)
VGS(th)
FRK160H
VGS = VDS, ID = 1mA
1.5
4.5
V
Gate-Body
Leakage Forward
(Note 4, 6)
IGSSF
FRK160D, R
VGS = 20V, VDS = 0
-
100
nA
(Note 5, 6)
IGSSF
FRK160H
VGS = 20V, VDS = 0
-
200
nA
Gate-Body
Leakage Reverse
(Note 2, 4, 6)
IGSSR
FRK160D, R
VGS = -20V, VDS = 0
-
100
nA
(Note 2, 5, 6)
IGSSR
FRK160H
VGS = -20V, VDS = 0
-
200
nA
Zero-Gate Voltage
Drain Current
(Note 4, 6)
IDSS
FRK160D, R
VGS = 0, VDS = 80V
-
25
μ
A
(Note 5, 6)
IDSS
FRK160H
VGS = 0, VDS = 80V
-
100
μ
A
Drain-Source
On-State Volts
(Note 1, 4, 6)
VDS(on)
FRK160D, R
VGS = 10V, ID = 50A
-
2.10
V
(Note 1, 5, 6)
VDS(on)
FRK160H
VGS = 16V, ID = 50A
-
3.15
V
Drain-Source
On Resistance
(Note 1, 4, 6)
RDS(on)
FRK160D, R
VGS = 10V, ID = 42A
-
0.040
(Note 1, 5, 6)
RDS(on)
FRK160H
VGS = 14V, ID = 42A
-
0.060
NOTES:
1. Pulse test, 300
μ
s max
2. Absolute value
3. Gamma = 300KRAD(Si)
4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 3E13
5. Gamma = 1000KRAD(Si). Neutron = 3E13
6. Insitu Gamma bias must be sampled for both VGS = +10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS
7. Gamma data taken 6/11/89 on TA 17661 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA,
PA 19401
8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989
9. Neutron derivation, INTERSIL Application note AN-8831, Oct. 1988
FRK160D, FRK160R, FRK160H
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