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參數資料
| 型號： | FRK254R |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE |
| 封裝： | HERMETIC SEALED, METAL, TO-204AE, 2 PIN |
| 文件頁數： | 3/6頁 |
| 文件大小： | 48K |
| 代理商： | FRK254R |
4-3
Post-Radiation Electrical Specifications
TC = +25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TYPE
TEST CONDITIONS
LIMITS
UNITS
MIN
MAX
Drain-Source
Breakdown Volts
(Note 4, 6)
BVDSS
FRK254D, R
VGS = 0, ID = 1mA
250
-
V
(Note 5, 6)
BVDSS
FRK254H
VGS = 0, ID = 1mA
238
-
V
Gate-Source
Threshold Volts
(Note 4, 6)
VGS(th)
FRK254D, R
VGS = VDS, ID = 1mA
2.0
4.0
V
(Note 3, 5, 6)
VGS(th)
FRK254H
VGS = VDS, ID = 1mA
1.5
4.5
V
Gate-Body
Leakage Forward
(Note 4, 6)
IGSSF
FRK254D, R
VGS = 20V, VDS = 0
-
100
nA
(Note 5, 6)
IGSSF
FRK254H
VGS = 20V, VDS = 0
-
200
nA
Gate-Body
Leakage Reverse
(Note 2, 4, 6)
IGSSR
FRK254D, R
VGS = -20V, VDS = 0
-
100
nA
(Note 2, 5, 6)
IGSSR
FRK254H
VGS = -20V, VDS = 0
-
200
nA
Zero-Gate Voltage
Drain Current
(Note 4, 6)
IDSS
FRK254D, R
VGS = 0, VDS = 200V
-
25
μ
A
(Note 5, 6)
IDSS
FRK254H
VGS = 0, VDS = 200V
-
100
μ
A
Drain-Source
On-State Volts
(Note 1, 4, 6)
VDS(on)
FRK254D, R
VGS = 10V, ID = 20A
-
3.58
V
(Note 1, 5, 6)
VDS(on)
FRK254H
VGS = 16V, ID = 20A
-
4.53
V
Drain-Source
On Resistance
(Note 1, 4, 6)
RDS(on)
FRK254D, R
VGS = 10V, ID = 12A
-
0.170
(Note 1, 5, 6)
RDS(on)
FRK254H
VGS = 14V, ID = 12A
-
0.215
NOTES:
1. Pulse test, 300
μ
s max
2. Absolute value
3. Gamma = 300KRAD(Si)
4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 1E13
5. Gamma = 1000KRAD(Si). Neutron = 1E13
6. Insitu Gamma bias must be sampled for both VGS = +10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS
7. Gamma data taken 11/1/89 on TA 17653 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA,
PA 19401
8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989
9. Neutron derivation, Intersil Application note AN-8831, Oct. 1988
FRK254D, FRK254R, FRK254H
相關PDF資料 |
PDF描述 |
|---|---|
| FRK260D | 46A, 200V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRK260H | 46A, 200V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRK260R | 46A, 200V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRK264D | 34A, 250V, 0.120 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRK264H | 34A, 250V, 0.120 Ohm, Rad Hard, N-Channel Power MOSFETs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FRK260D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:46A, 200V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRK260H | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:46A, 200V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRK260R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:46A, 200V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRK260R3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 46A I(D) | TO-204AE |
| FRK264D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:34A, 250V, 0.120 Ohm, Rad Hard, N-Channel Power MOSFETs |
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