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參數(shù)資料
型號: FRK260D
廠商: HARRIS SEMICONDUCTOR
元件分類: JFETs
英文描述: 46A, 200V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFETs
中文描述: 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
封裝: HERMETIC SEALED, METAL, TO-204AE, 2 PIN
文件頁數(shù): 3/6頁
文件大?。?/td> 47K
代理商: FRK260D
4-3
Post-Radiation Electrical Specifications
TC = +25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TYPE
TEST CONDITIONS
LIMITS
UNITS
MIN
MAX
Drain-Source
Breakdown Volts
(Note 4, 6)
BVDSS
FRK260D, R
VGS = 0, ID = 1mA
200
-
V
(Note 5, 6)
BVDSS
FRK260H
VGS = 0, ID = 1mA
190
-
V
Gate-Source
Threshold Volts
(Note 4, 6)
VGS(th)
FRK260D, R
VGS = VDS, ID = 1mA
2.0
4.0
V
(Note 3, 5, 6)
VGS(th)
FRK260H
VGS = VDS, ID = 1mA
1.5
4.5
V
Gate-Body
Leakage Forward
(Note 4, 6)
IGSSF
FRK260D, R
VGS = 20V, VDS = 0
-
100
nA
(Note 5, 6)
IGSSF
FRK260H
VGS = 20V, VDS = 0
-
200
nA
Gate-Body
Leakage Reverse
(Note 2, 4, 6)
IGSSR
FRK260D, R
VGS = -20V, VDS = 0
-
100
nA
(Note 2, 5, 6)
IGSSR
FRK260H
VGS = -20V, VDS = 0
-
200
nA
Zero-Gate Voltage
Drain Current
(Note 4, 6)
IDSS
FRK260D, R
VGS = 0, VDS = 160V
-
25
μ
A
(Note 5, 6)
IDSS
FRK260H
VGS = 0, VDS = 160V
-
100
μ
A
Drain-Source
On-State Volts
(Note 1, 4, 6)
VDS(on)
FRK260D, R
VGS = 10V, ID = 46A
-
3.38
V
(Note 1, 5, 6)
VDS(on)
FRK260H
VGS = 16V, ID = 46A
-
5.07
V
Drain-Source
On Resistance
(Note 1, 4, 6)
RDS(on)
FRK260D, R
VGS = 10V, ID = 29A
-
0.070
(Note 1, 5, 6)
RDS(on)
FRK260H
VGS = 14V, ID = 29A
-
0.105
NOTES:
1. Pulse test, 300
μ
s max
2. Absolute value
3. Gamma = 300KRAD(Si)
4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 1E13
5. Gamma = 1000KRAD(Si). Neutron = 1E13
6. Insitu Gamma bias must be sampled for both VGS = +10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS
7. Gamma data taken 11/2/90 on TA 17662 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA,
PA 19401
8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989
9. Neutron derivation, INTERSIL Application note AN-8831, Oct. 1988
FRK260D, FRK260R, FRK260H
相關(guān)PDF資料
PDF描述
FRK260H 46A, 200V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFETs
FRK260R 46A, 200V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFETs
FRK264D 34A, 250V, 0.120 Ohm, Rad Hard, N-Channel Power MOSFETs
FRK264H 34A, 250V, 0.120 Ohm, Rad Hard, N-Channel Power MOSFETs
FRK264R 34A, 250V, 0.120 Ohm, Rad Hard, N-Channel Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FRK260H 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:46A, 200V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFETs
FRK260R 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:46A, 200V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFETs
FRK260R3 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 46A I(D) | TO-204AE
FRK264D 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:34A, 250V, 0.120 Ohm, Rad Hard, N-Channel Power MOSFETs
FRK264H 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:34A, 250V, 0.120 Ohm, Rad Hard, N-Channel Power MOSFETs
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