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參數資料
| 型號： | FRK460D |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 17A, 500V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs |
| 中文描述： | 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE |
| 封裝： | HERMETIC SEALED, METAL, TO-204AE, 2 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 47K |
| 代理商： | FRK460D |
4-1
FRK460D, FRK460R,
FRK460H
17A, 500V, 0.400 Ohm, Rad Hard,
N-Channel Power MOSFETs
File Number
3238.1
Package
TO-204AE
Symbol
Features
17A, 500V, RDS(on) = 0.400
Second Generation Rad Hard MOSFET Results From New Design Concepts
Gamma
- Meets Pre-Rad Specifications to 100KRAD(Si)
- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
- Performance Permits Limited Use to 3000KRAD(Si)
- Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
- Survives 2E12 Typically If Current Limited to IDM
- 45.0nA Per-RAD(Si)/sec Typically
- Pre-RAD Specifications for 3E12 Neutrons/cm
2
- Usable to 3E13 Neutrons/cm
2
Gamma Dot
Photo Current
Neutron
Description
The Intersil has designed a series of SECOND GENERATION hardened power
MOSFETs of both N and P channel enhancement types with ratings from 100V to
500V, 1A to 60A, and on resistance as low as 25m
. Total dose hardness is
offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from
1E13n/cm
2
for 500V product to 1E14n/cm
2
for 100V product. Dose rate hardness
(GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with cur-
rent limiting.
This MOSFET is an enhancement-mode silicon-gate power field effect transistor of
the vertical DMOS (VDMOS) structure. It is specially designed and processed to
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n
o
)
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
This part may be supplied as a die or in various packages other than shown above.
Reliability screening is available as either non TX (commercial), TX equivalent of
MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of
MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired
deviations from the data sheet.
Absolute Maximum Ratings
(TC = +25
o
C) Unless Otherwise Specified
FRK460D, R, H
500
500
UNITS
V
V
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain-Gate Voltage (RGS = 20k
). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current
TC = +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
TC = +100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation
TC = +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = +100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Derated Above +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Inductive Current, Clamped, L = 100
μ
H, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
Operating And Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG
Lead Temperature (During Soldering)
Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
17
11
51
±
20
A
A
A
V
300
120
2.40
51
17
51
W
W
W/
o
C
A
A
A
o
C
-55 to +150
300
o
C
June 1998
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
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| FRK460H | 17A, 500V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRK460R | 17A, 500V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRK9150D | 30V N-Channel PowerTrench MOSFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FRK460D1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 17A I(D) | TO-204AE |
| FRK460H | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:17A, 500V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRK460R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:17A, 500V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRK9150D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:26A, -100V, 0.125 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRK9150H | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:26A, -100V, 0.125 Ohm, Rad Hard, P-Channel Power MOSFETs |
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