- 您現在的位置：買賣IC網 > PDF目錄375900 > FRM234D (HARRIS SEMICONDUCTOR) 7A, 250V, 0.70 Ohm, Rad Hard, N-Channel Power MOSFETs PDF資料下載
參數資料
| 型號： | FRM234D |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 7A, 250V, 0.70 Ohm, Rad Hard, N-Channel Power MOSFETs |
| 中文描述： | 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 封裝： | HERMETIC SEALED, METAL, TO-204AA, 2 PIN |
| 文件頁數： | 3/6頁 |
| 文件大小： | 48K |
| 代理商： | FRM234D |
4-3
Post-Radiation Electrical Specifications
TC = +25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TYPE
TEST CONDITIONS
LIMITS
UNITS
MIN
MAX
Drain-Source
Breakdown Volts
(Note 4, 6)
BVDSS
FRM234D, R
VGS = 0, ID = 1mA
250
-
V
(Note 5, 6)
BVDSS
FRM234H
VGS = 0, ID = 1mA
238
-
V
Gate-Source
Threshold Volts
(Note 4, 6)
VGS(th)
FRM234D, R
VGS = VDS, ID = 1mA
2.0
4.0
V
(Note 3, 5, 6)
VGS(th)
FRM234H
VGS = VDS, ID = 1mA
1.5
4.5
V
Gate-Body
Leakage Forward
(Note 4, 6)
IGSSF
FRM234D, R
VGS = 20V, VDS = 0
-
100
nA
(Note 5, 6)
IGSSF
FRM234H
VGS = 20V, VDS = 0
-
200
nA
Gate-Body
Leakage Reverse
(Note 2, 4, 6)
IGSSR
FRM234D, R
VGS = -20V, VDS = 0
-
100
nA
(Note 2, 5, 6)
IGSSR
FRM234H
VGS = -20V, VDS = 0
-
200
nA
Zero-Gate Voltage
Drain Current
(Note 4, 6)
IDSS
FRM234D, R
VGS = 0, VDS = 200V
-
25
μ
A
(Note 5, 6)
IDSS
FRM234H
VGS = 0, VDS = 200V
-
100
μ
A
Drain-Source
On-state Volts
(Note 1, 4, 6)
VDS(on)
FRM234D, R
VGS = 10V, ID = 7A
-
5.15
V
(Note 1, 5, 6)
VDS(on)
FRM234H
VGS = 16V, ID = 7A
-
7.72
V
Drain-Source
On Resistance
(Note 1, 4, 6)
RDS(on)
FRM234D, R
VGS = 10V, ID = 4A
-
0.700
(Note 1, 5, 6)
RDS(on)
FRM234H
VGS = 14V, ID = 4A
-
1.05
NOTES:
1. Pulse test, 300
μ
s max
2. Absolute value
3. Gamma = 300KRAD(Si)
4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 1E13
5. Gamma = 1000KRAD(Si). Neutron = 1E13
6. Insitu Gamma bias must be sampled for both VGS = +10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS
7. Gamma data taken 1/19/90 on TA17633 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA, PA
19401
8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989
9. Neutron derivation, Intersil Application note AN-8831, Oct. 1988
FRM234D, FRM234R, FRM234H
相關PDF資料 |
PDF描述 |
|---|---|
| FRM234H | 7A, 250V, 0.70 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRM234R | 7A, 250V, 0.70 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRM240D | 16A, 200V, 0.24 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRM240H | 16A, 200V, 0.24 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRM240R | 16A, 200V, 0.24 Ohm, Rad Hard, N-Channel Power MOSFETs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FRM234H | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:7A, 250V, 0.70 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRM234R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:7A, 250V, 0.70 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRM240D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:16A, 200V, 0.24 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRM240H | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:16A, 200V, 0.24 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRM240R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:16A, 200V, 0.24 Ohm, Rad Hard, N-Channel Power MOSFETs |
發布緊急采購，3分鐘左右您將得到回復。