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參數(shù)資料
| 型號(hào)： | FS20KMA-4A |
| 廠商： | Powerex Power Semiconductors |
| 英文描述： | Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
| 中文描述： | N溝道功率MOSFET高速開關(guān)使用 |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大小： | 45K |
| 代理商： | FS20KMA-4A |
PRELIMINARY
Some parametric limits are subject to change.
Sep.1998
MITSUBISHI Nch POWER MOSFET
FS20KMA-4A
HIGH-SPEED SWITCHING USE
0
4
8
12
16
20
0
40
80
120
160
200
V
DS
= 50V
100V
150V
T
C
h = 25°C
I
D
= 20A
0.4
0.6
0.8
1.0
1.2
1.4
–50
0
50
100
150
V
GS
= 0V
I
D
= 1mA
0
1.0
2.0
3.0
4.0
5.0
–50
0
50
100
150
V
DS
= 10V
I
D
= 1mA
0
10
20
30
40
50
0
0.8
1.6
2.4
3.2
4.0
T
C
= 125°C
75°C
25°C
V
GS
= 0V
Pulse Test
10
–1
10
0
2
3
5
7
10
1
2
3
5
7
–50
0
50
100
150
V
GS
= 10V
I
D
= 10A
Pulse Test
GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
GATE CHARGE Q
g
(nC)
G
G
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE V
SD
(V)
S
S
CHANNEL TEMPERATURE Tch (°C)
D
D
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
G
V
G
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
D
D
CHANNEL TEMPERATURE Tch (°C)
D
(
D
(
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
PULSE WIDTH t
w
(s)
T
t
(
10
–2
10
–1
2
3
5
7
10
0
2
3
5
7
10
1
2
3
5
7
10
–4
2 3 57
2 3 57
2 3 57
2 3 57
10
0
2 3 57
10
1
2 3 57
10
2
10
–3
10
–2
10
–1
D = 1.0
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
P
DM
tw
D
=
T
tw
T
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FS20KMA-5A | Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
| FS20SM-12 | 20 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor |
| FS20SM-12 | 20 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor |
| FS20SM-5 | HIGH-SPEED SWITCHING USE |
| FS20SM-5 | Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FS20KMA5A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 20A I(D) | TO-220AB |
| FS20KMA-5A | 制造商:POWEREX 制造商全稱:Powerex Power Semiconductors 功能描述:Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
| FS20R06KFS | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 20A I(C) |
| FS20R06KLS | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 20A I(C) |
| FS20R06VE3 | 功能描述:IGBT 模塊 IGBT-MODULE RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
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