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參數資料
型號: FS22SM-12A
廠商: Mitsubishi Electric Corporation
英文描述: MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
中文描述: 三菱N溝道功率MOSFET高速開關使用
文件頁數: 2/4頁
文件大?。?/td> 73K
代理商: FS22SM-12A
Sep. 2001
MITSUBISHI Nch POWER MOSFET
FS22SM-12A
HIGH-SPEED SWITCHING USE
V
(BR) DSS
V
(BR) GSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
V
V
μ
A
mA
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
°
C/W
600
±
30
2.5
14.4
3.0
0.23
2.53
24.0
4600
420
100
60
100
630
140
1.5
±
10
1
3.5
0.30
3.30
2.0
0.625
I
D
= 1mA, V
GS
= 0V
I
G
=
±
100
μ
A, V
DS
= 0V
V
GS
=
±
25V, V
DS
= 0V
V
DS
= 600V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 11A, V
GS
= 10V
I
D
= 11A, V
GS
= 10V
I
D
= 11A, V
DS
= 10V
V
DS
= 25V, V
GS
= 0V, f = 1MHz
V
DD
= 200V, I
D
= 11A, V
GS
= 10V, R
GEN
= R
GS
= 50
I
S
= 11A, V
GS
= 0V
Channel to case
ELECTRICAL CHARACTERISTICS
(Tch = 25
°
C)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Symbol
Unit
Parameter
Test conditions
Limits
Typ.
Min.
Max.
0
50
100
150
200
250
0
200
50
100
150
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(
°
C)
P
D
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
D
D
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
10
1
7
5
3
10
0
5
3
7
2
10
1
5
3
7
5
3
7
2
2
10
1
3
5 7
2
10
2
3
5 7
7
2
3
5
2
2
0
10
20
30
40
50
0
10
20
30
40
50
0
4
8
12
16
20
0
4
8
12
16
20
T
C
= 25
°
C
Single Pulse
100
μ
s
tw =
10
μ
s
1ms
DC
10
OUTPUT CHARACTERISTICS
(TYPICAL)
V
GS
= 20V,10V,8V,6V
P
D
=
200W
P
D
=
200W
T
C
= 25
°
C
Pulse Test
5V
4V
T
C
= 25
°
C
Pulse Test
V
GS
= 20V,10V,8V,6V,5V
4V
PERFORMANCE CURVES
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