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參數資料
| 型號： | FS2VS-18A |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH-SPEED SWITCHING USE |
| 中文描述： | 高速開關使用 |
| 文件頁數： | 2/4頁 |
| 文件大小： | 40K |
| 代理商： | FS2VS-18A |
Feb.1999
V
V
μ
A
mA
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
°
C/W
900
±
30
—
—
2
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
3
5.62
5.62
2.0
460
45
8
11
13
55
22
1.0
—
—
—
±
10
1
4
7.30
7.30
—
—
—
—
—
—
—
—
1.5
1.47
I
D
= 1mA, V
GS
= 0V
I
GS
=
±
100
μ
A, V
DS
= 0V
V
GS
=
±
25V, V
DS
= 0V
V
DS
= 900V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 1A, V
GS
= 10V
I
D
= 1A, V
GS
= 10V
I
D
= 1A, V
DS
= 10V
V
DS
= 25V, V
GS
= 0V, f = 1MHz
V
DD
= 200V, I
D
= 1A, V
GS
= 10V,
R
GEN
= R
GS
= 50
I
S
= 1A, V
GS
= 0V
Channel to case
MITSUBISHI Nch POWER MOSFET
FS2VS-18A
HIGH-SPEED SWITCHING USE
V
(BR) DSS
V
(BR) GSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
0
1.0
2.0
3.0
4.0
5.0
0
10
20
30
40
50
P
D
= 85W
V
GS
= 20V
T
C
= 25°C
Pulse Test
10V
5V
4V
10
–2
10
–1
2
3
5
7
10
0
2
3
5
7
10
0
2
10
1
3 5 7
2
10
2
3 5 7
2
10
3
3 5 7
3
2
10
1
5
7
100
m
s
tw = 10
m
s
T
C
= 25°C
Single Pulse
10ms
100ms
DC
1ms
0
20
40
60
80
100
0
200
50
100
150
0
4
8
12
16
20
0
0.4
0.8
1.2
1.6
2.0
V
GS
= 20V
@
T
C
= 25°C
Pulse Test
10V
5V
4.5V
4V
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(°C)
P
D
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
D
D
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
ELECTRICAL CHARACTERISTICS
(Tch = 25
°
C)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Symbol
Unit
Parameter
Test conditions
Limits
Typ.
Min.
Max.
PERFORMANCE CURVES
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